発表論文等（2000年以降）

2000年〜2006年 †

1. Y. Kawai, T. Maeda, Y. Nakamura, Y. Sakurai, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, H. Kinoshita and H. Shiomi: "6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1degrees-off substrate by closed-space sublimation method", Mater. Sci. Forum, 527-529 (2006) 263-266
2. Tomohiko Maeda, Yoshihiro Nakamura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Tomoaki Furusho, Hiroyuki Kinoshita and Masahiro Yoshimoto: "High-Speed and High-Quality Epitaxial Growth of 6H-SiC by Closed Sublimation Method", Mat. Res. Soc. Symp. Proc., 891 (2006) 597-601
3. M. Yoshimoto, W. Huang, G. Feng and K. Oe: "GaNAsBi? Semiconductor Alloy with Temperature-Insensitive Bandgap", Mat. Res. Soc. Symp. Proc., 891 (2006) pp.B11.6.1-B11.6.6.
4. G. Feng, K. Oe and M. Yoshimoto: "Bismuth containing III-V quaternary alloy InGaAsBi grown by MBE", phys. stat. solidi (a), 203 (2006) 2670-2673
5. M. Yoshimoto, H. Nishigaki, H. Harima, T. Isshiki, K. Kitaek, W.S.Yoo: "Application of UV-Raman spectroscopy for characterization of the physical crystal structure following flash anneal of an ultrashallow implanted Layer", J. Electrochemical Soc., 153, (2006) G697-702
6. M. Yoshimoto, W. Huang, G. Feng and M. Yoshimoto: "New semiconductor alloy GaNAsBi? with temperature-insensitive bandgap", phys. stat. solidi (b), 243 1421-1425 (2006)
7. S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho,, M. Yoshimoto, T. Kimoto, J. Suda, IG Ivanov, JP. Bergman, B. Monemar, T. Onuma and SF. Chichibu: "Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC", J. Appl. Phys. 99 093108 (2006)
8. K. Yamashita, M. Yoshimoto, K.Oe: "Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication", phys. stat. solidi (c), 3 (3) 693-696 (2006)
9. G. Feng and M. Yoshimoto: "Influence of Mn incorporation on MBE growth of (In,Mn)N", J. Electronic Materials, 35, 319-322 (2006)
10. Y. Takehara, M. Yoshimoto, W.Huang, J. Saraie, K.Oe, A. Chayahara、Y.Horino: "Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy", Jpn J. Appl. Phys. 45 (2006) 67-69
11. W. Huang, K. Oe, G. Feng, M. Yoshimoto: "Molecular-beam epitaxy and characteristics of GaNyAs1-x-yBix", J.Appl. Phys. 98 053505 1-6 (2005)
12. W. Huang, M. Yoshimoto, K. Oe, A. Chayahara, Y.Horino: "New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy" Jpn. J. Appl. Phys., 44 (2005) L1161-L1163
13. M. Yoshimoto, W. Huang, J. Saraie, K.Oe: "MBE-grown GaNAsBi? matched to GaAs with 1.3-μm emission wavelength" Mat. Res. Soc. Symp. Proc., 829, 523-528 (2005)
14. 田口貢士, 吉本昌広, 更家淳司: 「有機液体原料を用いたラジカルビーム堆積法による低炭素濃度シリコン窒化膜の堆積」 材料, 53、1318-1322 (2004)
15. K. Taguchi, M. Yoshimoto, J. Saraie: "Dense Structure of SiNx films fabricated by radical beam deposition method using hexamethyldisilazane", Jpn. J. Appl. Phys., 43 (2004) L403-L1405
16. M. Yoshimoto, W. Huang, Y. Takehara, J. Saraie, K. Oe: "GaNyAs1-x-yBix alloy lattice matched to GaAs with 1.3 μm photoluminescence emission", Jpn. J. Appl. Phys., 43 (2004) L1350-L1352
17. M. Yoshimoto, W. Huang, Y. Takehara, J. Saraie, A. Chayahara, Y. Horino, K. Oe: "New semiconductor GaNAsBi? alloy grown by molecular beam epitaxy", Jpn. J. Appl. Phys., 43 (2004) L845-L847
18. W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, A. Chayahara, Y. Horino and, K. Oe: "Molecular Beam of Quaternary Semiconductor Alloy GaNAsBi?", Proc. 16th IPRM16, pp.876-881 (2004)
19. Kohshi Taguchi, Masahiro Yoshimoto, Junji Saraie: "Reduction of carbon impurity in silicon nitride films deposited from metalorganic source", Jpn. J. Appl. Phys., 43,(2004) L148-L150
20. E. Kurimoto, M. Hangyo, H. Harima, M. Yoshimoto, T. Yamaguchi, T. Araki, Y. Nanishi, K. Kisoda: "Spectroscopic observation of oxidation process in InN", Appl. Phys. Lett., 84 212-214 (2004)
21. Masahiro Yoshimoto, Wei Huang, Kohshi Taguchi, Hiroshi Harima, Junji Saraie: "Improved electrical properties of InN by high-temperature annealing with in situ capped SiNx layers", Jpn. J. Appl. Phys., 43 (2004) L97-L99
22. Kunishige Oe and Masahiro Yoshimoto: "GaAsBi semiconductor alloy towards temperature-insensitive wavelength laser diodes", Proc. 12th Int. Workshop Phys. Semicond. Dev. (IWPSD 2003), Chennai, India, pp.876-881. (2003)
23. M. Yoshimoto, Y.Yamamoto, J. Saraie: "Fabrication of InN/Si heterojunction with rectifying characteristics", phys. stat. soldi C, 0, 2794-2797 (2003)
24. Masahiro Yoshimoto, Hiroaki Yamamoto, Wei Huang, Hiroshi Harima, Junji Saraie, Akiyoshi Chayahara, and Yuji Horino: "Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen", Appl. Phys. Lett., 83 3480-3482 (2003)
25. Masahiro Yoshimoto, Satoshi Murata, Akiyoshi Chayahara, Yuji Horino, Junji Saraie, Kunishige Oe: "Metastable GaAsBi alloy grown by molecular beam epitaxy", Jpn. J. Appl. Phys., 42 (2003) L1235-L1237
26. 吉本昌広: 「サブミクロン解像度極低温顕微ホトルミネセンス装置の開発とワイドギャップ半導体の欠陥検出への応用」, 材料, 51,　989-994 (2002)
27. M. Yoshimoto, J. Saraie, S. Nakamura: "Impurity Incorporation in Epitaxially Laterally Overgrown GaN Detected by Cryogenic Photoluminescence Microscope with Sub-micron Spatial Resolution", J. Cryst. Growth, 237-239, 1075-1078 (2002)
28. M. Yoshimoto: "Sub-micron Scale Photoluminescence Images of Wide Bandgap Semiconductors by Cryogenic Scanning Optical Microscope", Materials Science and Engineering B, 91-92, 21-24 (2002)
29. M. Yoshimoto, M. Itoh, J. Saraie, T. Yasui, S. Ha, T. Kurobe, and H. Matsunami: "GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices", Jpn. J. Appl. Phys., 40 (2001) 3953-3959
30. M. Yoshimoto, J. Saraie, S.Nakamura: "Low-Temperature Microscopic Photoluminescence Images of Epitaxially Laterally Overgrown GaN", Jpn. J. Appl. Phys., 40 (2001) L386-L388
31. K. Nakamura, M. Itoh, M. Yoshimoto, J. Saraie, H. Matsunami: "Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy", Jpn. J. Appl. Phys., 40 (2001) 2132-2137
32. K. Nakamura, T. Hashimoto, T. Yasui, M. Yoshimoto, H. Matsunami: "Lattice Distortion in GaAsP Heteroepitaxy Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy", Jpn. J. Appl. Phys., 40 (2001) 1337-1378
33. M. Yoshimoto, M. Goto, J. Saraie: "Direct Observation of Polytype Domain in GaN by Cryogenic Scanning Photoluminescence Microscope with Sub-Micron Spatial Resolution", Jpn. J. Appl. Phys., 40 (2001) 3159-3160
34. Masahiro Yoshimoto, Takao Nakano, Takashi Yamasita, Koji Suzuki, Junji Saraie: "MBE Growth of InN on Si toward Hole-Barrier Structure in Si Devices", Proc. Int. Workshop on Nitride Semiconductors,2000, Nagoya(IPAP Conf. Series 1), 186-189 (2000)
35. Masahiro Yoshimoto: "Scanning Photoluminescence Microscope with Sub-micorn Resolution and High Optical Throughput at a low Temperature", Jpn. J. Appl. Phys., 39 (2000) 6105-6106
36. M. Yoshimoto, M. Goto, J. Saraie, T. Kimoto, H. Matsunami: "Sub-μm scale photoluminescence image of SiC and GaN at a low temperature", Mater. Sci. Forum, 338-342/,627-630 (2000)