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¡¡¡¡2007ǯ¡Á2024ǯ°ìÍ÷ (2000ǯ¡Á2006ǯ¤Ï¤³¤Á¤é)

1. M. Kaneko, H. Nishinaka, and M. Yoshimoto, "Crystallographic and band structure analysis of ¦Â-(AlxGa1¡Ýx)2O3/¦Â-(InyGa1¡Ýy)2O3 thin film grown on ¦Â-Ga2O3 substrate via mist CVD" AIP Adv., 14 (2024) 045102.
2. K. Shimazoe, H. Nishinaka, and M. Yoshimoto, "Demonstration of vertical schottky barrier diodes based on ¦Á-Ga2O3 thin films enabled by corundum structured rh-ITO bottom electrodes" MRS Adv., (2024).
3. K. Shimazoe, H. Nishinaka, and M. Yoshimoto, "Heteroepitaxial growth of a-, m-, and r-plane ¦Á-Ga2O3 thin films on rh-ITO electrodes for vertical device applications" J. Cryst. Growth, 630 (2024) 127596.
4. S. Hosaka, H. Nishinaka, T. Ogawa, H. Miyake, and M. Yoshimoto, "High conductivity of n-type ¦Â-Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition" AIP Adv., 14 (2024) 015040.
5. Y. Taniguchi, H. Nishinaka, K. Shimazoe, T. Kawaharamura, K. Kanegae, and M. Yoshimoto, "Visible-light absorption of indium oxide thin films via Bi3+ doping for visible-light-responsive photocatalysis" Mater. Chem Phys., 315 (2024) 128961.
6. O. Ueda, H. Nishinaka, N. Ikenaga, N. Hasuike, and M. Yoshimoto, "TEM characterization of defects in ¦Ê-(InxGa1-x)2O3 thin film grown on (001) FZ-grown ¦Å-GaFeO3 substrate by mist CVD" Jpn. J. Appl. Phys., 62 (2023) 125501.
7. À¾Ãæ ¹ÀÇ·¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëGa2O3¤Î·ë¾½Â¿·ÁÀ©¸æµ»½Ñ¡×ºàÎÁ¡¡72´¬10¹æ (2023)¡¡750-756.
8. T. Kato, H. Nishinaka, K. Shimazoe, and M. Yoshimoto, "Epitaxial growth of ¦Ä-Ga2O3 thin films grown on YSZ and sapphire substrates using ¦Â-Fe2O3 buffer layers via mist CVD" Phys. Status Solidi (A) Appli. Mater., (2023) 2300582.
9. Y. Kunihashi, Y. Shinohara, S. Hasegawa, H. Nishinaka, M. Yoshimoto, K. Oguri, H. Gotoh, M. Kohda, J. Nitta, snd H. Sanada, "Bismuth induced enhancement of Rashba spin–orbit interaction in GaAsBi/GaAs heterostructures" Appl. Phys. Lett., 122 (2023) 182402.
10. S. Hasegawa, N. Hasuike, K. Kanegae, H. Nishinaka, and M. Yoshimoto, "Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence" Mater. Sci. Semicond. Process., 162 (2023) 107543.
11. K. Shimazoe, H. Nishinaka, Y. Taniguchi, T. Kato, K. Kanegae, and M. Yoshimoto, "Vertical self-powered ultraviolet photodetector using ¦Á-Ga2O3 thin films on corundum structured rh-ITO electrodes" Mater. Lett., 341 (2023) 134282.
12. T. Kato, H. Nishinaka, K. Shimazoe, K. Kanegae, and M. Yoshimoto, "Demonstration of Bixbyite-Structured ¦Ä-Ga2O3 Thin Films Using ¦Â-Fe2O3 Buffer Layers by Mist Chemical Vapor Deposition" ACS Appl. Electron. Mater., 5 (2023) 1715.
13. Y. Arata, H. Nishinaka, K. Kazutaka, M. Takeda, and M. Yoshimoto, "Modulation of optical properties in epitaxial ZnO thin films on synthetic mica by incorporating Mg and bending stress" MRS Adv., 8 (2023) 371-375 .
14. T. Ogawa, H. Nishinaka, K. Shimazoe, T. Nagaoka, H. Miyake, K. Kanegae, and M. Yoshimoto, "Homoepitaxial growth of Ge doped ¦Â-gallium oxide thin films by mist chemical vapor deposition" Jpn. J. Appl. Phys., 62 (2023) SF1016.
15. S. Hasegawa, N. Hasuike, K. Kanegae, H. Nishinaka, and M. Yoshimoto, "Raman scattering study on dilute nitride-bismide GaNAsBi? alloys: behavior of photo-excited LO phonon-plasmon coupled mode" Jpn. J. Appl. Phys., 62 (2023) 011003 .
16. M. Kaneko, H. Nishinaka, K. Kanegae, and M. Yoshimoto, "Coherent growth of ¦Â-(AlxGa1-x)2O3 alloy thin films on (010) ¦Â-Ga2O3 substrates using mist CVD" Jpn. J. Appl. Phys., 62 (2023) SF1002 .
17. H. Nishinaka, K. Shimazoe, K. Kanegae, and M. Yoshimoto, "Corundum-structured ¦Á-Fe2O3 substrates for ¦Á-Ga2O3 epitaxial growth" Mater. Lett., 336 (2023) 133784 .
18. S. Tanaka, Y. Fujiwara, H. Nishinaka, M. Yoshimoto, and M. Noda "Mist-CVD-derived Hf0.55Zr0.45O2 ferroelectric thin films post-annealed by rapid thermal annealing(Featured article)" AIP Adv., 13 (2023) 015304.
19. Y. Arata, H. Nishinaka, M. Takeda, and M. Yoshimoto, "Strain-Induced Modulation of Resistive Switching Temperature in Epitaxial VO2 Thin Films on Flexible Synthetic Mica" ACS Omega, 7 (2022) 41768-41774.
20. ÅçźÏ¼ù¡¢ À¾Ãæ¹ÀÇ·¡¢ ¿·ÅÄͪÂÁ¡¢ µÈËÜ ¾»¹­¡ÖLiTaO3´ðÈľå¤Ø¤Î¦Á-Ga2O3¤ÎÀ®Ä¹¤Ë¦Á-Fe2O3¥Ð¥Ã¥Õ¥¡ÁؤÎÀ®Ä¹»þ´Ö¤¬Í¿¤¨¤ë±Æ¶Á¡×ºàÎÁ¡¡71´¬10¹æ (2022)¡¡830-834.
21. M. Biswas, and H. Nishinaka, "Thermodynamically metastable ¦Á-, ¦Å- (or ¦Ê-), and ¦Ã-Ga2O3: From material growth to device applications" APL Mater., 10 (2022) 060701.
22. H. Nishinaka, O. Ueda, N. Ikenaga, N. Hasuike, K. Kanegae, and M. Yoshimoto, "Growth of indium-incorporated ¦Ê-Ga2O3 thin film lattice-matched to the ¦Å-GaFeO3 substrate" Mater. Lett.: X, 14 (2022) 100149.
23. H. Kawata, S. Hasegawa, H. Nishinaka, and M. Yoshimoto, "Improving the photovoltaic properties of GaAs/GaAsBi pin diodes by inserting a compositionally graded layer at the hetero-interface" Semicond. Sci. Tech, 37 (2022) 065016.
24. K. Shimazone, H. Nishinaka, K. Watanabe, and M. Yoshimoto, "Epitaxial growth of metastable c-plane rhombohedral indium tin oxide using mist chemical vapor deposition" Mater. Sci. Semicond. Process, 147 (2022) 106689.
25. Y. Kajita, H. Nishinaka, and M. Yoshimoto, "Observing the microstructure of a (001) ¦Ê-Ga2O3 thin film grown on a (¡Ý201) ¦Â-Ga2O3 substrate using automated crystal orientation mapping transmission electron microscopy(HOT articles)" CrystEngComm, 24 (2022) 3239.
26. Y. Ogura, Y. Arata, H. Nishinaka, and M. Yoshimoto, "Alloying In2O3 and Ga2O3 on AlN templates for deep-ultraviolet transparent conductive films by mist chemical vapor deposition" Jpn. J. Appl. Phys., 61 (2022) SC1037.
27. H. Nishinaka, O. Ueda, Y. Ito, N. Ikenaga, N. Hasuike, and M. Yoshimoto, "Plan-view TEM observation of a single-domain ¦Ê-Ga2O3 thin film grown on ¦Å-GaFeO3 substrate using GaCl3 precursor by mist chemical vapor deposition" Jpn. J. Appl. Phys., 61 (2022) 018002.
28. ¿·ÅÄ ÍªÂÁ¡¢ À¾Ãæ ¹ÀÇ·¡¢ Åçź Ï¼ù¡¢ µÈËÜ ¾»¹­¡Ö¦Á-Fe2O3¥Ð¥Ã¥Õ¥¡ÁؤÎÁÞÆþ¤Ë¤è¤ë¥Õ¥ì¥­¥·¥Ö¥ë¤Ê¹çÀ®±ÀÊì´ðÈľå¤Ø¤Î¦Á-Ga2O3ÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×ºàÎÁ¡¡70´¬10¹æ (2021)¡¡738-744.
29. H. Kawata, S. Hasegawa, J. Matsumura, H. Nishinaka, and M. Yoshimoto, "Fabrication of a GaAs/GaNAsBi? solar cell and its performance improvement by thermal annealing" Semicon. Sci. Tech., 36 (2021) 095020.
30. M.Fregolent, M. Buffolo, C. De Santi, S. Hasegawa, J. Matsumura, H. Nishinaka, M. Yoshimoto, G. Meneghesso, E. Zanoni and Matteo Meneghini, "Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy" J. Phys. D: Appl/ Phys., 54 (2021) 345109 .
31. H. Nishinaka, T. Nagaoka, Y. Kajita, and M. Yoshimoto, "Rapid homoepitaxial growth of (010) ¦Â-Ga2O3 thin films via mist chemical vapor deposition" Mater. Sci. Semicond. Process, 128 (2021) 105932 .
32. R. Horie, H. Nishinaka, D. Tahara, and M. Yoshimoto, "Epitaxial growth of ¦Ã-(AlxGa1-x)2O3 alloy thin films on spinel substrates via mist chemical vapor deposition" J. Alloys Compd., 851 (2021) 156927 .
33. H. Nishinaka, O. Ueda, D. Tahara, Y. Ito, N. Ikenaga, N. Hasuike, and M. Yoshimoto, "Single-Domain and Atomically Flat Surface of ¦Ê-Ga2O3 Thin Films on FZ-Grown ϵ-GaFeO3 Substrates via Step-Flow Growth Mode" ACS Omega, 5 (2020) P29585-P29592 .
34. Y. Fujiwara, D. Tahara, H. Nishinaka, M. Yoshimoto, and M. Noda, "A preliminary study on mist CVD-derived ferroelectric Hf1-xZr xO2films featuring its possibility of suitable operation for non-volatile analog memory" Jpn. J. Appl. Phys., 59 (2020) SPPB09 .
35. N. Isomura, T, Nagaoka, Y. Watanabe, K. Kutsuki, H. Nishinaka, and M. Yoshimoto, "Determination of Zn-containing sites in ¦Â-Ga2O3film grown through mist chemical vapor deposition via X-ray absorption spectroscopy" Jpn. J. Appl. Phys., 59 (2020) 070909 .
36. K. Shimazoe, H. Nishinaka, Y. Arata, D. Tahara, and M. Yoshimoto, "Phase control of ¦Á-and ¦Ê-Ga2O3 epitaxial growth on LiNbO3 and LiTaO3 substrates using ¦Á-Fe2O3buffer layers" AIP Adv., 10 (2020) 055310 .
37. Y. Arata, H. Nishinaka, K. Shimazoe, and M. Yoshimoto, "Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p-and n-type Wide-Bandgap Semiconductor Oxides" MRS Adv., 5 (2020) P1671-P1679 .
38. Y. Arata, H. Nishinaka, D. Tahara, and M. Yoshimoto, "Van der Waals epitaxy of ferroelectric ϵ-gallium oxide thin film on flexible synthetic mica" Jpn. J. Appl. Phys., 59 (2020) 025503 .
39. W.S. Yoo, K. Kang, T. Ishigaki, J.G. Kim, N. Hasuike, H. Harima, and M. Yoshimoto, "Thermal silicidation of Ni/SiGe? and characterization of resulting silicide films using Raman spectroscopy and X-Ray diffraction" ECS Transactions, 98 (2020) P457-P464 .
40. D. Tahara, H. Nishinaka, Y. Arata, K. Shimazoe, and M. Yoshimoto, "Microstructures of ϵ-Ga2O3 thin film on (100) TiO2 substrate by mist chemical vapor deposition", IMFEDK2019, 8950694 (2019) P79-P80 .
41. S. Morimoto, H. Nishinaka, and M. Yoshimoto, "Growth and characterization of F-doped ¦Á-Ga2O3 thin films with low electrical resistivity" Thin Solid Films, 682 (2019) P18-P23 .
42. K. Kakuyama, S. Hasegawa, H. Nishinaka, and M. Yoshimoto, "Impact of a small change in growth temperature on the tail states of GaAsBi(editor¡Çs¡¡pick)" J. Appl. Phys., 58 (2019) 060907.
43. S. Hasegawa, K. Kakuyama, H. Nishinaka, and M. Yoshimoto, "PEDOT:PSS/GaAs1-xBi x organic-inorganic solar cells" Jpn. J. Appl. Phys., 58 (2019) 060907.
44. D. Tahara, H. Nishinaka, S. Sato, L. Li, T. Kawaharamura, M. Yoshimoto, and M. Noda, "Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n+-Si(100) substrates" Jpn. J. Appl. Phys., 58 (2019) SLLB10 .
45. D. Tahara, H. Nishinaka, M. Noda, and M. Yoshimoto, "Use of mist chemical vapor deposition to impart ferroelectric properties to ¦Å-Ga2O3 thin films on SnO2/c-sapphire substrates" Mater. Lett., 232 (2018) P47-P50 .
46. H. Nishinaka, H. Komai, D. Tahara, Y. Arata, and M. Yoshimoto, "Microstructures and rotational domains in orthorhombic ϵ-Ga2O3 thin films" Jpn. J. Appl. Phys. 57 (2018) 115601 .
47. O. Vaccaro, M. I. Alonso, M. Garriga, J. Gutierrez, D. Pero, M. R. Wagner, J. S. Reparaz, C. M. Sotomayor Torres, X. Vidal, E. A. Carter, P. A. Lay, M. Yoshimoto, and A. R. Goni, "Localized thinning for strain concentration in suspended germanium membranes and optical method for precise thickness measurement" AIP Adv., 8 (2018) 115131 .
48. H. Nishinaka and M. Yoshimoto, "Mist Chemical Vapor Deposition of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Thin Films with High Electrical Conductivity and Transparency on Various ¦Á-Al2O3 Substrates" Cryst. Growth Des., 18 (2018) P4022-P4028 .
49. D. Tahara, H. Nishinaka, S. Morimoto, and M. Yoshimoto, "Heteroepitaxial growth of ϵ-(AlxGa1-x)2O3 alloy films on c -plane AlN templates by mist chemical vapor deposition", Appl. Phys. Lett., 112 (2018) 152102 .
50. Y. Arata, H. Nishinaka, D. Tahara, and M. Yoshimoto, "Heteroepitaxial growth of single-phase ϵ-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer" CrystEngComm, 20 (2018) P6236-P6242 .
51. H. Nishinaka, N. Miyauchi, D. Tahara, S. Morimoto, and M. Yoshimoto, "Incorporation of indium into ϵ-gallium oxide epitaxial thin films grown: Via mist chemical vapour deposition for bandgap engineering" CrystEngComm, 20 (2018) P1882-P1888 .
52. H. Nishinaka, D. Tahara, S. Morimoto, and M. Yoshimoto, "Epitaxial growth of ¦Á-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using ¦Á-Fe2O3 buffer layers" Mater. Lett., 205 (2017) P28-P31 .
53. D. Tahara, H. Nishinaka, S. Morimoto, and M. Yoshimoto, "Heteroepitaxial growth of ¦Å-Ga2O3 thin films on cubic (111) GGG substrates by mist chemical vapor deposition", IMFEDK2017, 7998036 (2017) P48-P49 .
54. D. Tahara, H. Nishinaka, S. Morimoto, and M. Yoshimoto, "Stoichiometric control for heteroepitaxial growth of smooth ϵ-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition", Jpn. J. Appl. Phys. 56 (2017) 078004 .
55. W. S. Yoo, K. Kang, H. Nishigaki, N. Hasuike, H. Harima, M. Yoshimoto, K. Sekar, " Micro-raman characterization of cluster carbon implanted si before and after rapid thermal annealing¡É, ECS J. Solid State Sci. Technol., 75 (2016) P605-P613
56. H. Nishinaka, and M. Yoshimoto, "Solution-based mist CVD technique for CH3NH3Pb(Br1-xClx)3 inorganic-organic perovskites", Jpn. J. Appl. Phys. 55 (2016) 100308 .
57. H. Nishinaka, D. Tahara, and M. Yoshimoto, "Heteroepitaxial growth of epsilon-Ga2O3 thin films on cubic MgO (111) and YSZ (111) substrates by mist chemical vapor deposition" Jpn. J. Appl. Phys. 55 (2016) 1202BC .
58. W. S. Yoo, K. Kang, G. Murai, M. Yoshimoto, "Temperature dependence of photoluminescence spectra from crystalline silicon¡É, ECS J. Solid State Sci. Technol., 4 (2015) P456-P461
59. W.S. Yoo, M. Yoshimoto, A. Sagara, S.Shibata, ¡ÈRoom temperature Photoluminescence characterization of low dose As+ implanted Si after rapid thermal annealing¡É ECS Solid State Lett. 4 (2015) P51-P54
60. W.S. Yoo, K. Kang, T. Ueda, T. Ishigaki, H. Nishigaki, N. Hasuike, H. Harima, M. Yoshimoto, C.S. Tan, ¡ÈCharacterization of hetero-epitaxial Ge films on Si using multiwavelength micro-raman spectroscopy¡É ECS J. Solid State Sci. Technol., 4 (2015) P9-P15
61. W.S. Yoo, H. Harima, M. Yoshimoto, ¡ÈPolarized raman signals from Si wafers: Dependence of in-plane incident orientation of probing light¡É ECS J. Solid State Sci. Technol., 4 (2015) P356-P363
62. T. Fuyuki, K. Yoshida, R. Yoshioka, M. Yoshimoto, "Electrically pumped room-temperature operation of GaAs1-xBix laser diodes with low-temperature dependence of oscillation wavelength" Appl. Phys. Express 7 (2014) 082101(4 pages).
63. W.S. Yoo, K. Kang, T. Ueda, T. Ishigaki, H. Nishigaki, N. Hasuike, H.Harima, M. Yoshimoto, ¡ÈUltraviolet (UV) raman characterization of ultra- Shallow ion implanted silicon¡É, Proc. Int. Conf. Implantation Technol. 2014, INSPEC Accession Number:14702977 (4 pages)
64. W.S. Yoo, K. Kang, T. Ueda, T. Ishigaki, , H. Nishigaki, N. Hasuike, H. Harima, M. Yoshimoto, C.S. Tan, ¡ÈDetection of Ge and Si intermixing in Ge/Si using multiwavelength micro-Raman spectroscopy¡É ECS Transactions 64 (2014) 79-88
65. Y. Sasada, T. Kurumi, H. Shimizu, H. Kinoshita, M. Yoshimoto, "Junction formation via direct bonding of Si and 6H-SiC" Mater. Sci. Forum 778-780 (2014) 714-717
66. ÅßÌÚÂö¿¿¡¢°ËÆ£¿ðµ­¡¢³Ñ¹ÀÊå¡¢µÈËܾ»¹­¡ÖGaAs1-xBix¤ª¤è¤ÓGaAs/GaAs1-xBix¥Ø¥Æ¥í³¦Ì̤ˤª¤±¤ë¶Éºß½à°Ì¡×ºàÎÁ¡¡62´¬11¹æ (2013)¡¡672-678 .
67. W.S. Yoo, T. Ishigaki, T. Ueda, K. Kang, N. Hasuike, H. Harima, M. Yoshimoto,¡ÈCharacterization of ion implanted silicon using UV Raman and multiwavelength photoluminescence for in-line dopant activation monitoring¡É Ext. Abst. 13th Int. Workshop on Junction Technology (IWJT) 2013, pp.41-44
68. Takuma Fuyuki, Ryo Yoshioka, Kenji Yoshida and Masahiro Yoshimoto, "Long-wavelength emission in photo-pumped GaAs1¡ÝxBix laser with low temperature dependence of lasing wavelength" Appl. Phys. Lett. 103 (2013) 202105
69. Woo Sik Yoo, Noriyuki Hasuike, Hiroshi Harima and Masahiro Yoshimoto, "Formation and Characterization of Nickel Germanosilicide on Si1-xGex/Si/SiO2/Si", ECS Trans. 50 (2013) 1073-1080 .
70. Masahiro Yoshimoto, Masashi Okutani, Gota Murai, Shuji Tagawa, Hiroki Saikusa, Shuhei Takashima, and Woo Sik Yoo, "Photoluminescence Characterization of Defects in Rapidly Annealed Ultra Shallow Junctions" ECS J. Solid State Sci. Technol. 2 (2013) 195-204 .
71. Masahiro Yoshimoto, Mizuki Itoh, Yoriko Tominaga, and Kunishige Oe, "Quantitative estimation of density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy", J. Cryst. Growth, 378 (2013) 73-76 .
72. Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto, "Study of the Deep Levels of a GaAs/p-GaAs1-xBix Heterostructure Grown by Molecular Beam Epitaxy", MRS Proceedings 1432 (2012¡Ë27-32 .
73. Masahiro Yoshimoto, Masashi Okutani, Hiroki Saikusa, Shuhei Takashima, Woo Sik Yoo, "Defect Detection in Recrystallized Ultra-Shallow Implanted Silicon by Multiwavelength-Excited Photoluminescence", AIP Conf. Proc. 1496 (2012) 160-163.
74. Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto, "Interface State in p-Type GaAs/GaAs1-xBix Heterostructure", Jpn. J. Appl. Phys. 51 (2012) 11PC02.
75. Masahiro Yoshimoto, Ryosuke Araki, Takamasa Kurumi, and Hiroyuki Kinoshita, "Structure of Directly Bonded Interfaces between Si and SiC", ECS Transactions: Semiconductor wafer Bonding 12, 50 (7) (2012) 61-70.
76. Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto, "Study of the Deep Levels of a GaAs/p-GaAs1-xBix Heterostructure Grown by Molecular Beam Epitaxy", MRS Proceedings 1432 (2012¡Ë27-32.
77. K. Kado, T. Fuyuki, K. Yamada, K. Oe, M. Yoshimoto, ¡ÈHigh hole mobility in GaAs1-xBix alloys¡É Jpn. J. Appl. Phys. 51 (2012) 040204 (3pages)
78. Y. Tominaga, K. Oe, M. Yoshimoto, ¡ÈPhoto-pumped GaAs1-xBix lasing operation with low-temperature-dependent oscillation wavelength¡É Proceedings of the SPIE, 8277 (2012) 827702 (6 pages).(invited paper)
79. O. Ueda, Y. Tominaga, M. Yoshimoto, N. Ikenaga, K. Oe ¡ÈStructural evaluation of GaAs1-xBix mixed crystals by TEM¡É Proc. Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conf. Indium Phosphide and Related Materials, pp.1-4. INSPEC Accession Number: 12172587
80. Takuma Fuyuki, Shota Kashiyama, Yoriko Tominaga, Kunishige Oe, and Masahiro Yoshimoto: "Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy", Jpn J. Appl. Phys., 50, (2011) 080203 (3pages)
81. Yoriko Tominaga, Kunishige Oe and Masahiro Yoshimoto: "Temperature-insensitive photoluminescence emission wavelength in GaAs1-xBix/GaAs multiquantum wells", phys. stat. sol. (c) 8, No.2, 260-262 (2011)
82. M. Okutani, H. Saikusa, S. Takashima,, Masahiro Yoshimoto, W. S. Yoo: "Study of Multi-wavelength-excited photoluminescence on recrystallization of ultra-shallow implanted silicon", Ext. Abs. 11th International Workshop on Junction Technology (IWJT2011), Kyoto,2011, IEEE Cat No. CFP11796-PRT (ISBN: 978-1-61284-132-8) pp.114-115
83. Woo Sik Yoo, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Masashi Fukumoto, Noriyuki Hasuike, Hiroshi Harima, and Masahiro Yoshimoto: "Non-Contact and Non-Destructive Characterization Alternatives of Ultra-Shallow Implanted Silicon p-n Junctions by Multi-Wavelength Raman and Photoluminescence Spectroscopy" J. Electrochem. Soc., 158 (2011) H80-H84.
84. Masashi Okutani, Syuhei Takashima, Masahiro Yoshimoto and Woo Sik Yoo: "A Deep Level Transient Spectroscopy Study on Recrystallization of Ultra-Shallow Implanted Silicon", Proc. Int. Conf. Ion Implantation Technology 2010¡¡¡ÊIIT 2010), Kyoto, AIP Conf. Proc. 1321, 2010, pp.200-203.
85. M. Fukumoto, H. Hasuike, H. harima, M. Yoshimoto, W.S. Yoo: "Non-contact and non-destructive characterization of shallow implanted silicon pn junctions using ultra-violet Raman spectroscopy", Proc. Int. Conf. Ion Implantation Technology 2010¡¡¡ÊIIT 2010), Kyoto, AIP Conf. Proc. 1321, 2010, pp.208-211.
86. Takuma Fuyuki, Yoriko Tominaga, Kunishige Oe and Masahiro Yoshimoto: "Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well structures", Jpn J. Appl. Phys., 49, (2010) 070211 (3pages)
87. Yoriko Tominaga, Kunishige Oe and Masahiro Yoshimoto: "Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBix Laser by Photo-Pumping", Appl. Phys. Express 3, (2010) 062201
88. Mitsutaka Nakamura and Masahiro Yoshimoto: "Effects of Excitation Power and Temperature on Photoluminescence from Stacking Faults in 4H-SiC Epilayers", Jpn J. Appl. Phys. 49 (2010) 010202 (3pages).
89. Mitsutaka Nakamura, Yoshikazu Hashino, Tomoaki Furusho, Hiroyuki Kinoshita, Hiromu Shiomi and Masahiro Yoshimoto: "Characterization of Schottky diodes on 4H-SiC with various off-axis angles grown by sublimation epitaxy", Mater. Sci. Forum, 600-603 (2009) pp 967-970
90. Masahiko Aoki, Megumi Miyazaki, Taro Nishiguchi, Hiroyuki Kinoshita and Masahiro Yoshimoto: "TEM Observation of the Polytype Transformation of Bulk SiC Ingot", Mater. Sci. Forum, 600-603 (2009) pp55-58
91. Yoriko Tominaga, Yusuke Kinoshita, Kunishige Oe and Masahiro Yoshimoto: "Structural investigation of GaAs1-xBix/GaAs multiquantum wells", Appl. Phys. Lett. 93 (13) 131915 (2008)
92. Hiroshi Shinohara, Hiroyuki Kinoshita and Masahiro Yoshimoto: "Si metal-oxide-semiconductor field-effect transistor on Si-on-SiC directly bonded wafers with high thermal conductance", Appl. Phys. Lett. 93 (12) 122110 (2008)
93. Yoriko Tominaga, Yusuke Kinoshita, Gan Feng, Kunishige Oe and Masahiro Yoshimoto: "Growth of GaAs1-xBix/GaAs multi-quantum wells by molecular beam epitaxy", phys. stat. sol. (c) 5 (9) 2719-2721 (2008)
94. T.Sasaki, H.Minami, H.Harima, T. Isshiki, M.Yoshimoto and W.S. Yoo: "Mluti-wavelength Raman and HRTEM study of Ni/Si interface after NiSi? formation at low temperatures using various heating methods", ECS Transactions, 13 (1) 405-412 (2008)
95. Gan Feng, Masahiro Yoshimoto and Kunishige Oe: "Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs Bismide Alloy", Jpn J. Appl. Phys. 46 (2007) L764-L766
96. Masahiro Yoshimoto, Gan Feng and Kunishige Oe: "Annealing effects of diluted GaAs nitride and bismide on photoluminescence", ECS Transaction, 6 (2) 45-51 (2007)
97. M. Yoshimoto, W. Huang, G. Feng, Y. Tanaka and K. Oe: "Molecular Beam Epitaxy of GaNAsBi? Layer for Temperature-Insentive Wavelength", J. Crystal Growth, 301-302 (2007) 975-978
98. Gan Feng, Kunishige Oe and Masahiro Yoshimoto: "Temperature dependence of Bi behaviors in MBE growth of InGaAs", J. Crystal Growth, 301-302 (2007) 121-124

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1. H. Nishinaka, "Mist CVD for tailoring five polymorphs via epitaxial techniques"(Invited), SPIE Photonics West, San Francisco(US), 2024/1, Oxide-based Materials and Devices XV, 12887-22.
2. T. Kano, Y. Arata, H. Nishinaka, and M. Yoshimoto, "Growth and Characterization of N-Doped VO2 Thin Films for the Thermochromic and Smart Windows by the Mist Chemical Vapor Deposition", 2023 MRS Fall Meeting, Boston(US), 2023/12, SF03.06.19.
3. K. Shimazoe, H. Nishinaka, T. Ogawa, and M. Yoshimoto, "Vertical ¦Á-Ga2O3 Device Applications Enabled by Same Crystal Structured Indium Tin Oxide Electrode via Mist Chemical Vapor Deposition", 2023 MRS Fall Meeting, Boston(US), 2023/12, EL11.11.04.
4. Y. Kusuda, T. Miyashita, Y. Asai, and H. Nishinaka, " A Comparison of Low-Temperature Deposition for SiO2 in PECVD Using SiH4 and TEOS", 244th ECS Meeting, Gothenburg(Sweden), 2023/10, D02-1172.
5. Benjamin M. Janzen, N. Hajizadeh, M. Meißner, M, Marggraf, C. Hartung, Z. Galazka, P. Mazzolini, A. Sacchi, R. Fornari, C. Petersen, H. von Wenckstern, M. Grundmann, E. Kluth, M. Feneberg, R. Goldhahn, T. Oshima, T. Kato, H. Nishinaka, J. Varley, M. Wagner, "Comparative Study of Temperature-Dependent Bandgap Transitions in Ga2O3 Polymorphs", The 6th U.S. Galium Oxide Workshop, New York(US), 2023/8, AC+TM-MoM-6.
6. K. Shimazoe, H. Nishinaka, T. Kato, Y. Taniguchi, and M. Yoshimoto, "Mist chemical vapor deposition of ¦Á-Ga2O3 and ¦Á-Fe2O3 thin films on corundum-structured rh-ITO electrode", International Conference on Crystal Growth and Epitaxy 20th, Naples(Italy), 2023/8, SG-I-1-02.
7. K. Watanabe, Y. Nishioka, H. Nishinaka, and M. Yoshimoto, "Deposition and optical properties of Mn-doped Cs3Cu2I5 thin films by mist deposition" EM-NANO 2023, Kanazawa , 2023/6, PB-47.
8. H. Nishinaka, K. Shimazoe, M. Kaneko, T. Ogawa, T. Kato, Y. Taniguchi, and M. Yoshimoto, "Tailoring Five Polymorphs of Ga2O3 using Mist CVD", Ultra-wide bandgap oxides 2023, Bristol(UK), 2023/6, Session 3: Material growth.
9. Y. Taniguchi, H. Nishinaka, K. Shimazoe, T. Kawaharamura, and M. Yoshimoto, "Incorporation of Bismuth into In2O3 and Ga2O3 thin films to introduce intermediate levels", Ultra-wide bandgap oxides 2023, Bristol(UK), 2023/6, posters.
10. T. Kato, H. Nishinaka, K. Shimazoe, and M. Yoshimoto, "Epitaxial growth of ¦Ä-Ga2O3 thin films using ¦Â-Fe2O3 buffer layers grown on YSZ and sapphire substrates by mist CVD" Compound Semiconductor Week 2023, Jeju (Korea), 2023/5, P1-076.
11. R. Ueda, S. Hasegawa, H. Nishinaka, and M. Yoshimoto, "Determination of hole mobility in p-type GaAsBi by Raman spectroscopy" Compound Semiconductor Week 2023, Jeju (Korea), 2023/5, P1-060.
12. Y. Taniguchi, H. Nishinaka, K. Shimazoe, T. Kawaharamura, K. Kanegae, and M. Yoshimoto, "Visible-light absorption of In2O3 thin films and nanorods by incorporation of Bismuth for visible light-responsive photocatalyst", European Materials Research Society 2023 Spring Meeting, Strasbourg(France), 2023/5, C_P01 16_1464.
13. Y. Kusuda, Y. Asai, H. Nishinaka, O. Tsuji, "Low stress TEOS-SiO2 films deposited by PECVD using a low frequency" 25th International Symposium on Plasma Chemistry, Kyoto(Japan), 2023/5, POS-8-211.
14. K. Shimazoe, "MOCVD Growth of ZnO Thin Films and Spray Pyrolysis Growth of Ga2O3 , In2O3 , and Their Alloys", Jornada Científica sobre obtención y caracterización de materiales para la plasmónica, Online (University of Valencia), 2022/12.
15. Y. Arata, H. Nishinaka, M. Takeda, and M. Yoshimoto, "van der Waals Epitaxy of Oxide Thin Films on Flexible Synthetic Mica for Modulation of Physical Properties by Bending Stress" 2022 MRS Fall meeting, Boston(USA), 2022/12, NM07.10.08.
16. K. Kaneko, H. Nishinaka, Y. Kajita, K. Kanegae, and M. Yoshimoto, "Alloying ¦Â-(AlxGa1-x)2O3 thin films grown on (010) ¦Â-Ga2O3 substrates by mist CVD" The 2022 International Meeting for Future of Electron Decives, Kansai, Ryukoku University Avanti Kyoto Hall, 2022/11, P09.
17. C. Fernández-Saiz, C. Martínez-Tomás, S. Agouram, H. Nishinaka, V. Muñoz-Sanjosé, "Crystal growth of Ga2O3 thin films via Mist-CVD" 18th Symposium of Young Chemical Researchers of the RSEQ, Sevilla Spain, 2022/11, P-104.
18. O. Ueda, H. Nishinaka, N. Ikenaga, N. Hasuike, and M. Yoshimoto, "TEM characterization of defects in ¦Ê-(Ga1-xInx)2O3 thin film grown on (001) FZ-grown ¦Å-GaFeO3 substrate by Mist CVD", The 4th International Workshop on Gallium Oxide and Related Materials, Nagano(Japan), 2022/10, Pos2-08.
19. M. Kaneko, H. Nishinaka, Y. Kajita, and M. Yoshimoto, "Epitaxial growth of ¦Â-(AlxGa1-x)2O3 and ¦Â-(InxGa1-x)2O3 alloy thin films on (010) ¦Â-Ga2O3 substrates via mist chemical vapor deposition", The 4th International Workshop on Gallium Oxide and Related Materials, Nagano(Japan), 2022/10, Epi2-7.
20. T. Kato, H. Nishinaka, K.Shimazoe, and M. Yoshimoto, "Demonstration of ¦Ä-Ga2O3 epitaxial thin films using ¦Â-Fe2O3 buffer layers by mist CVD", The 4th International Workshop on Gallium Oxide and Related Materials, Nagano(Japan), 2022/10, Pos1-16.
21. T. Ogawa, H. Nishinaka, K.Shimazoe, T. Nagaoka, H. Miyake, and M. Yoshimoto, "Homoepitaxial growth of Ge-doped ¦Â-Ga2O3 films by mist chemical vapor deposition", The 4th International Workshop on Gallium Oxide and Related Materials, Nagano(Japan), 2022/10, Pos1-12.
22. H. Nishinaka, O. Ueda, N. Ikenaga, N. Hasuike, and M. Yoshimoto, "Single-domain ¦Ê-Ga2O3 thin films grown on ¦Å-GaFeO3 substrates by mist CVD"(Invited), The 4th International Workshop on Gallium Oxide and Related Materials, Nagano(Japan), 2022/10, Epi1-2.
23. Y. Arata, H. Nishinaka, M. Takeda, and M. Yoshimoto, "Effect of bending stress on the optical properties of ZnO epitaxial thin films grown on flexible synthetic mica." 8th International Symposium on Transparent Conductive Materials and 12th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, Crete(Greece), 2022/10.
24. T. Ishino, K. Shimazoe, H. Nishinaka, and M. Yoshimoto, "Epitaxial growth of Mo-doped Indium Oxide (IMO) thin film on (111)YSZ by mist chemical vapor deposition." 8th International Symposium on Transparent Conductive Materials and 12th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, Crete(Greece), 2022/10.
25. K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda, "Percentage of CN Acceptors to Residual Carbon Atoms in n-Type GaN Homoepitaxial Layers", International Workshop on Nitride Semiconductors 2022, Berlin, 2022/10.
26. Y. Seki, A. Okada, Y. Kajita, H. Nishinaka, K. Kadono, "Effect of Surface Orientation and Morphology of ¦Â-Ga2O3 Substrates on the Initial Stage of NiO Epitaxial Growth", The 22nd International Vacuum Congress, Sapporo Covention Center(Sapporo), 2022/9.
27. S. Hasegawa, N. Hasuike, H. Nishinaka, M. Yoshimoto, "Raman Study of Photoexcited Plasma in GaAs/GaAsBi Heterostructures", 9th International Symposium on Control of Semiconductor Interfaces, Nagoya University(Nagoya), 2022/9.
28. M. Azuma, "Development and commercialization of embedded FeRAM", KIT/Symetrix International Symposium, Online(Kyoto Inst. Tech.), 2022/8.
29. S. Hasegawa, H. Kawata, R. Aoki, H. Nishinaka, M. Yoshimoto, "GaNAsBi?/GaAs Multiple Quantum well Structures Grown by plasmaassisted Molecular Beam Epitaxy: Bi Incorporation Scheme at an Interface",The International Symposium on Novel maTerials and quantum Technologies 2021, Online, 2021/12.
30. Y. Kunihashi, Y. Tanaka, H. Sanada, K. Oguri, M. Kohda, J. Nitta, S. Hasegawa, H. Nishinaka, M. Yoshimoto, H. Gotoh, "Spin Dynamics Induced by In-plane Magnetic Field in GaAsBi",The International Symposium on Novel maTerials and quantum Technologies 2021, Online, 2021/12.
31. Y. Seki, A. Okada, Y. Kajita, H. Nishinaka, K. Kadono, "Surface morphologies and band alignments of NiO layers grown on ¦Â-Ga2O3 surfaces." The 9th International Symposium on Surface Science, Online(Tokushima), 2021/11.
32. K. Shimazoe, H. Nishinaka, and M. Yoshimoto, "Growth of corundum structured oxides and their alloy for lattice matched applications." The 2021 International Meeting for Future of Electron Devices, Kansai, Online(Kyoto), 2021/11.
33. H. Umemura, Y. Ishisaki, D. Matsukawa, M. Kimura, and H. Nishinaka, "Evaluation of electrical properties of ferroelectric HfO2 thin films for neuromorphic Systems" The 2021 International Meeting for Future of Electron Devices, Kansai, Online(Kyoto), 2021/11.
34. Y. Ogura, Y. Arata, H. Nishinaka, and M. Yoshimoto, " Epitaxial Growth of Indium-Gallium-Oxide-Alloy Thin Films on AlN Templates by Mist Chemical Vapor Deposition " 2021 International Conference on Solid State Devices and Materials, Online, 2021/9.
35. K. Watanabe, H. Nishinaka, and M. Yoshimoto, " Deposition and Characteristics of lead-free Cs3Cu2(Cl1-xIx)5(0¡åx¡å1) thin films " IMFEDK2020 Satellite event, Online(Kyoto), 2020/11.
36. K. Shimazoe, H. Nishinaka, Y. Arata, Y. Ito, and M. Yoshimoto, " Growth of Rhombohedral Indium Oxide Thin Films on LiTaO3 Substrate for Fabrication of Lattice Matched Indium Gallium Oxide Power Devices " IMFEDK2020 Satellite event, Online(Kyoto), 2020/11.
37. Y. Arata, H. Nishinaka, and M. Yoshimoto, " Epitaxial Growth of ZnO Thin Films on Flexible Substrates and Characteristics of Optical Properties by Bending " IMFEDK2020 Satellite event, Online(Kyoto), 2020/11.
38. Y. Arata, H. Nishinaka, D. Tahara, K. Shimazoe, Y. Ito, and M. Yoshimoto, " Fabrication of Flexible and Epitaxial Oxide Thin Films on Cleaved Synthetic Mica Using Mist Chemical Vapor Deposition " 2019 Materials Research Soceity Fall meeting, Hynes Convention Center, Boston, 2019/12.
39. K. Shimazoe, H. Nishinaka, D. Tahara, Y. Arata, and M. Yoshimoto, " Growth and Characterization of Corundum Structure Oxide Semiconductor on ¦Á-Fe2O3 Buffer Layers by The Mist CVD Method " 2019 Materials Research Soceity Fall meeting, Hynes Convention Center, Boston, 2019/12.
40. D. Tahara, H. Nishinaka, Y. Arata, K. Shimazoe, Y. Ito, M. Noda, and M. Yoshimoto, " Growth and Characterization of Orthorhombic ¦Å-Ga2O3 Thin Films Fabricated via Mist Chemical Vapor Deposition Technique " 2019 Materials Research Soceity Fall meeting, Hynes Convention Center, Boston, 2019/12.
41. S. Hasegawa, K. Kakuyama, H. Nishinaka, and M. Yoshimoto, " Characterization and Reduction of the Tail States in GaAsBi Alloy " The 2019 International Meeting for Future of Electron Decives, Kansai, Ryukoku University Avanti Kyoto Hall, 2019/11.
42. Y. Arata, H. Nishinaka, D. Tahara, K. Shimazoe, Y. Ito, and M. Yoshimoto, " Fabrication of Flexible and Epitaxial Metastable Ga2O3 Thin Films on Synthetic Mica Using OxideBuffer? Layer " The 2019 International Meeting for Future of Electron Decives, Kansai, Ryukoku University Avanti Kyoto Hall, 2019/11.
43. K. Shimazoe, H. Nishinaka, D. Tahara, Y. Arata, and M. Yoshimoto, " Growth of ¦Á-and ¦Å-Ga2O3Epitaxial Thin Films onLiTaO3Substrate " The 2019 International Meeting for Future of Electron Decives, Kansai, Ryukoku University Avanti Kyoto Hall, 2019/11.
44. D. Tahara, H. Nishinaka, Y. Arata, K. Shimazoe, and M. Yoshimoto, " Microstructures of ¦Å-Ga2O3 Thin Film on (100)TiO2 Substrate by Mist Chemical Vapor Deposition " The 2019 International Meeting for Future of Electron Decives, Kansai, Ryukoku University Avanti Kyoto Hall, 2019/11.
45. K. Shimazoe, H. Nishinaka, and M. Yoshimoto, " Growth And Characterization of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Films on Various Plane ¦Á-Al2O3 Substrates with ¦Á-Fe2O3 Buffer " Compound Semiconductor week 2018, Nara Todaiji Temple Culture Center, 2019/10
46. Y. Arata, H. Nishinaka, D. Tahara, K. Shimazoe, Y. Ito, and M. Yoshimoto, " Van der Waals epitaxy of flexible ¦Å- and ¦Á-Ga2O3 filmson cleaved mica by mist chemical vapor deposition " 11th International Symoposium on Transparent Oxide and Related Materials for Electronics and Optics, Nara Todaiji Temple Culture Center, 2019/10.
47. Y. Ito, D. Tahara, Y. Arata, H. Nishinaka, and M. Yoshimoto, " Effect of plasma treatment of GaN templates on ¦Å-Ga2O3 epitaxial growth by mist chemical vapor deposition " 3rd International Workshop on Ga2O3 and Related Materials, USA Ohio, 2019/8.
48. D. Tahara, H. Nishinaka, Y. Arata, and M. Yoshimoto, " Epitaxial Growth of ¦Á-(InxAl1-x)2O3 Alloy Films by Mist Chemical Vapor Deposition " 3rd International Workshop on Ga2O3 and Related Materials, USA Ohio, 2019/8.
49. S. Hasegawa, K. Kakuyama, H. Nishinaka, and M. Yoshimoto, " Growth temperature dependence of GaAsBi tail states probed by sub-band absorption and photoluminescence characteristics " 10th International Workshop on Bismuth-Containing Semiconductors, France, 2019/7.
50. D. Tahara, H. Nishinaka, M. Noda, and M. Yoshimoto, " A New Ferroelectric Undoped Hafnium Oxide Film on N+-Si(100) Substrate by a Novel Mist Chemical Vapor Deposition " F2C¦Ð2 Joint conference 2019, Swiss, 2019/7.
51. T. Okumura, H. Nishinaka, and M. Yoshimoto, " Epitaxial growth of SnO2:F thin films on c-plane sapphire substrate with tensile strain " 7th International Symposium on Transparent Conductive Materials, Greece, 2018/10.
52. S. Morimoto, H. Nishinaka, and M. Yoshimoto, " Fabrication of F doped ¦Á-Ga2O3 thin film with low electrical resistivity " 7th International Symposium on Transparent Conductive Materials, Greece, 2018/10.
53. S. Hasegawa, K. Kakuyama, P. Patil, H. Nishinaka, and M. Yoshimoto, " Fabrication of PEDOT: PSS/GaAs1-xBix solar cells " 9th International Workshop on Bismuth-Containing Semiconductors, Kyoto, 2018/7.
54. D. Tahara, H. Nishinaka, and M. Yoshimoto, " Epitaxial Growth Mechanism of Inserted Rotation Domain for Orthorhombic ¦Å¡¾Ga2O3Film on (100) TiO2 Substrate by Mist Chemical Vapor Deposition " Compound Semiconductor week 2018, USA Boston, 2018/6.
55. N. Miyauchi, H. Nishinaka, D. Tahara, S. Morimoto, and M. Yoshimoto, " Indium incorporation into ¦Å-Ga2O3 epitaxial thin films grown by mist chemical vapor deposition " 2nd International Workshop on Ga2O3 and Related Materials, Italy, 2017/9.
56. S. Morimoto, D. Tahara, H. Nishinaka, and M. Yoshimoto, " ¦Å-Ga2O3 epitaxial growth on AlN and GaN templates using GaCl3 precursor by mist chemical vapor deposition " 2nd International Workshop on Ga2O3 and Related Materials, Italy, 2017/9.
57. D. Tahara, H. Nishinaka, S. Morimoto, N. Miyauchi, and M. Yoshimoto, " Epitaxial growth of ¦Å-Al2xGa2-2xO3alloy films on c-plane AlN templates by mist chemical vapor deposition " 2nd International Workshop on Ga2O3 and Related Materials, Italy, 2017/9.
58. Kakuyama, K. Suzuki, H. Nishinaka, and M. Yoshimoto, " Fabrication of GaAsBi photodiodes and their spectral response" 8th International Workshop on Bismuth-Containing Semiconductors, Germany, 2017/7.
59. D. Tahara, H. Nishinaka, and M. Yoshimoto, " Hexagonal phase-pure ¦Å-Ga2O3 films grown on GaN(0001) templates by mist chemical vapor deposition" Compound Semiconductor week 2018, Yokohama, 2016/12.
60. M. Yoshimoto, R. Yoshioka, H. Kuruma, H. Nishinaka, "Fabrication of GaAsBi laser diodes with 1.1-um emission wavelength"(Invited), 7th International Workshop on Bismuth-Containing Semiconductors, July 24-27, 2016, Shanghai, China, Invited talk 8.
61. H. Nishinaka, and M. Yoshimoto, "Metastable rh-ITO epitaxial films on various sapphire substrates with alpha-Ga2O3 buffer layers", International Workshop on Gallium Oxide and Related Materials 2015, Kyoto, Japan.
62. D. Sodeoka, Y. Sasada, H. Kinoshita, H. Ishida, M. Yoshimoto, "Leakage current mechanism at directly bonded Si/SiC interface", 16th International Conference on Silicon Carbide and Related Materials, Giardini Naxos, Italy, October 4 - 9, 2015
63. M. Yoshimoto, "GaAsBi Laser Diodes with Low Temperature Dependence of Lasing Wavelength (Invited)" 6th International Workshop on Bismuth-Containing Semiconductors, July 19-22, 2015, Madison, Wisconsin, USA, M1-1
64. H. Kinoshita, M. Yoshimoto, "Behavior of Macroscopic Defects during the High-Speed Growth of Single Crystalline 6H-SiC (Invited)", 2015 MRS Spring Meeting & Exhibit, April 2015, San Francisco, CC10.01
65. M. Yoshimoto, "Molecular beam epitaxy of GaAsBi and its application to laser diodes with low-temperature dependence of oscillation wavelength (Invited)", 18th European Molecular Beam Epitaxy workshop, Canazei, Italy, March 2015.
66. R. Yoshioka, T. Fuyuki, K. Yoshida, M. Yoshimoto, "Molecular Beam Epitaxy of Laser-quality GaAsBi (Invited)", 18th International Conference on Molecular Beam Epitaxy (MBE 2014), September 2014, Flagstaff, Arizona, USA.
67. M. Yoshimoto, "Molecular beam epitaxy of GaAsBi and its lasing chracteristics"(Invited), 6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA), Leeds, UK, July 2014.
68. M. Yoshimoto, R. Yoshioka, K. Yoshida, and T. Fuyuki, "GaAsBi laser diodes fabricated by molecular beam epitaxy", 5th International Workshop on Bismuth-Containing Semiconductors, Cork, Ireland, July 2014.
69. T. Fuyuki, R. Yoshioka, K. Yoshida, M. Yoshimoto,"GaAsBi Laser Diodes with Low Temperature Dependence of Lasing Wavelength", CLEO 2014, San Jose, June 2014.
70. Sasada, T. Kurumi, H. Shimizu, H. Kinoshita, Masahiro Yoshimoto, "Junction formation via direct bonding of Si and 6H-SiC", International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013), Miyazaki Japan, October 2013.
71. Takuma Fuyuki, Masahiro Yoshimoto, "Wavelength Extension of GaAs1-xBix Laser with Low Temperature Coefficient of Lasing Wavelength", 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices, Arkansas, USA, July 2013.
72. Masahiro Yoshimoto, Takuma Fuyuki "Localized states in GaAsBi and GaAs/GaAsBi heterostructures (Invited)", 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices, Arkansas, USA, July 2013.
73. Takuma Fuyuki, Masahiro Yoshimoto, "Long wavelength emission of GaAs1-xBix laser with low-temperature coefficient of lasing wavelength", 40th International Symposium on Compound Semiconductors (ISCS2013), Kobe, May 2013.
74. Masahiro Yoshimoto, Ryosuke Araki, Takamasa Kurumi, and Hiroyuki Kinoshita, "Structure of Directly Bonded Interfaces between Si and SiC", 222nd Meeting of The Electrochemical Society/PRiME 2012.
75. Woo Sik Yoo, Noriyuki Hasuike, Hiroshi Harima, Masahiro Yoshimoto, "Formation and Characterization of Nickel Germanosilicide on Si1-x Gex/Si/SiO2/Si", 222nd Meeting of The Electrochemical Society/PRiME 2012.
76. Mizuki Itoh, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto, "Quantitative estimation of the density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy", 17th International Conference on Molecular Beam Epitaxy (MBE2012).
77. Kosuke Kado, Mizuki Itoh, Yoriko Tominaga, Takuma Fuyuki, Kazuya Yamada, Kunishige Oe, Masahiro Yoshimoto, "High Hole Mobility in GaAs1-xBix Alloys", 3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
78. Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto, "Interface States in GaAs/p-GaAsBi Heterointerface Using Admittance Spectroscopy", 3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
79. Masahiro Yoshimoto, Masashi Okutani, Hiroki Saikusa, Shuhei Takashima, Woo Sik Yoo, "Defect Detection in Recrystallized Ultra-Shallow Implanted Silicon by Multiwavelength-Excited Photoluminescence", 19th Int. Conf. Ion Implantation Technology (IIT2012)
80. Gota Murai, Masashi Okutani, Masahiro Yoshimoto, Woo Sik Yoo, "Photoluminescence study on recrystallization of ultra-shallow junction towards in-line measurements", 2012 International Meeting for Future of Electron Devices
81. Takamasa Kurumi, Ryosuke Araki, Hiroyuki Kinoshita, Masahiro Yoshimoto, "TEM observation of directly bonded interface between Si and SiC", 2012 International Meeting for Future of Electron Devices
82. Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto, "Study of the Deep Levels of a GaAs/p-GaAs1-xBix Heterostructure Grown by Molecular Beam Epitaxy", 2012 Materials Reserch Society (MRS) Spring Meeting.
83. Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto, "Photo-pumped GaAs1-xBix lasing operation with low-temperature-dependent oscillation wavelength (Invited)", SPIE Photonic West, San Francisco, January 2012
84. Y. Tominaga, K. Yamada, K. Oe and M. Yoshimoto: "Molecular beam epitaxial growth of In1-yGayAs1-xBix/GaAs multiquantum wells", International Workshop on Quantum Nanostructures and Nanoelectronics (QNN2011), Tokyo, Japan, October 2011
85. M. Yoshimoto, Y. Tominaga, and K. Oe: "Lasing in GaAsBi with low temperature dependence of oscillation wavelength", 2nd International workshop on Bismuth-Containing Semiconductors:Theory, Simulation, and Experiment, Guildford, Surrey, UK, July 2011
86. M. Okutani, H. Saikusa, S. Takashima, M. Yoshimoto and W. S. Yoo: "Study of Multi-wavelength-excited photoluminescence on recrystallization of ultra-shallow implanted silicon", The 11th International Workshop on Junction Technology (IWJT2011), Kyoto, Japan, June 2011
87. Y. Tominaga, K. Oe and M. Yoshimoto: "Variations in the abruptness at GaAs1-xBix/GaAs heterointerfaces caused by thermal annealing", 38th International Symposium on Compound Semiconductors (ISCS2011), Berlin, Germany, May 2011
88. T. Fuyuki, S. Kashiyama, Y. Tominaga, K. Oe and M. Yoshimoto: "Deep level transient spectroscopy study of p-type GaAs1-xBix mixed crystals", 38th International Symposium on Compound Semiconductors (ISCS2011), Berlin, Germany, May 2011
89. O. Ueda, Y. Tominaga, N. Ikenaga, M. Yoshimoto and K. Oe: "Stractural evaluation of GaAs1-xBix mixed crystals by TEM", 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011), Berlin, Germany, May 2011
90. R. Araki, H. Shimizu, T. Kurumi, H. Kinoshita, M. Yoshimoto: "Drain current - gate voltage characteristics of si MOSFETs fabricated on Si-onSiC wafers" 2011 International Meeting for Future of Electron Devices, Kansai, Suita City, May 2011
91. Y. Tominaga, K. Oe and M. Yoshimoto: "Lasing in GaAs1-xBix/GaAs Thin Film Cavity with Low-Temperature-Dependent Oscillation Wavelength", 22nd IEEE International Semiconductor Laser conference (ISLC2010), Kyoto, Japan, October 2010
92. M. Yoshimoto and K. Oe: "Present status and future prospect of Bi-containing semiconductors (Invited)", 1st International Workshop on Bismuth-Containing Semiconductors:Theory, Simulation, and Experiment, the University of Michigan, MI, USA, July 2010
93. T. Fuyuki, Y. Tominaga, K. Oe and M. Yoshimoto: "Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum Well Structures on¡¡GaA£ó" Electronic Materialas Conference 2010, Notre Dame, USA June 2010
94. M. Okutani, S. Takashima,W. Yoo, M. Yoshimoto:"A Deep Level Transient Spectroscopy Study on Recrystallization of Ultra-Shallow Implanted Silicon", Proc. Int. Conf. Ion Implantation Technology 2010 (IIT 2010), Kyoto, June 2010
95. Y. Tominaga, K. Oe and M. Yoshimoto: "Temperature-insensitive Photoluminescence Emission Wavelength in GaAs1-xBix/GaAs Multiquantum Wells", 37th International Symposium on Compound Semiconductors (ISCS2010), Kagawa, Japan, June 2010
96. M. Yoshimoto, H. Shinohara, H. Kinoshita: "Reduction of self-heating effect in silicon MOSFETs on directly bonded Si-on-SiC wafer with high heat conductance", Device Research Conference 2009 (DRC2009), University Park PA, USA, June 2009
97. M. Yoshimoto, M. Fukumoto, H. Minami, N. Hasuike, H. Harima, W. Yoo: "Raman Scattering Characterization of Annealing Effects in Ultra-Shallow Boron-Implanted Si Wafers", 215th Electrochemical Society Meeting,San Francisco, CA, USA, May 2009
98. S. Takashima, M. Yoshimoto, W. Yoo:"Photoluminescence Study on Ion Implanted Silicon after Rapid Thermal Annealing",215th Elecrochemical Society Meeting,San Francisco, CA, USA, May 2009
99. K. Yamada, Y. Tominaga, K. Oe, M. Yoshimoto:"Growth of InGaAsBi/GaAs Multi-Quantum Wells on (100)GaAs",2009 International Meeting for Future of Electron Devices, Kansai, Suita City, May 2009
100. Y. Tominaga, K. Oe, M. Yoshimoto:"GaAsBi/GaAs multi-quantum wells with well-defined multi-layered structures",IEEE Nanotechnology Materials and Devices Conference 2008, Kyoto City, October 2008
101. H. Shinohara, H. Kinoshita, M. Yoshimoto:"Silicon MOSFET on directly bonded Si-on-SiC wafer with high heat conductance",IEEE Nanotechnology Materials and Devices Conference 2008, Kyoto City, October 2008
102. Y. Tominaga, Y. Kinoshita, K. Oe, M. Yoshimoto:"Growth of GaAs1-xBix/GaAs multi-quanum wells with 1.3 ¦Ìm photoluminescence emission",50th Electronic Materials Conference,Santa Barbara, CA, USA, June 2008
103. H. Shinohara, H. Kinoshita, M. Yoshimoto:"Si MOSFET on direct bonded Si-on-SiC wafer with high heat conductance",50th Electronic Materials Conference,Santa Barbara, CA, USA, June 2008
104. M. Aoki, M. Miyazaki, T. Nishiguchi, H. Kinoshita, M. Yoshimoto:"TEM Observation of the Polytype Transformation of Bulk SiC Ingot",Int. Conf. Silicon Carbide and Related Materials 2007, Otsu City, October 2007
105. M. Yoshimoto, Y. Hashino, M. Nakamura, T. Furusho, H. Kinoshita, H. Shiomi:"Characterization of Schottky Diode on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy",Int. Conf. Silicon Carbide and Related Materials 2007, Otsu City, October 2007
106. Y. Tominaga, Y.Kinoshita, G Feng, K. Oe, M. Yoshimoto:"Growth of GaAsBi/GaAs Multi-QuantumWells? by Molecular Beam Epitaxy",34th Int. Sympo. Compound Semiconductors (ISCS 2007), Kyoto City, September 2007
107. T. Sasaki, H. Minami, K. Kisoda, W. S. Yoo, M. Yoshimoto, H. Harima:"UV-VIS Raman Characterization of High Dose Ultra Shallow Implanted Silicon before and after Excessive Annealing",2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba City, September 2007
108. M. Yoshimoto, G. Feng, K. Oe:"Annealing Effects of Diluted GaAs Nitride and Bismide on Photoluminescence",211th Electrochemical Society Meeting,Chicago, May 2007
109. K. Oe, G. Feng, Y. Kinoshita, M. Yoshimoto:"GaNyAs1-x-yBix Alloy for Temperature-insensitive Wavelength Semiconductor Lasers",European Materials Reserch Society Spring Meeting,Strasbourg, France, May 2007
110. Y. Kinoshita, Y. Tominaga, G. Feng, M. Yoshimoto, K. Oe:"GaAsBi/GaAs Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy",2007 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Osaka City, April 2007
111. S. Momii, D. Koba, N. Kuwano, S. Hata, M. Yoshimoto:"Location of impurity oxygen atoms in InN grown by MBE",3rd Asia-Pacific Workshop on Widegap Semiconductors(APWS-2007),Jeonju, Korea, March 2007

¹ñÆâ³Ø²ñ †

¡¡¡¡2007ǯ¡Á2023ǯ°ìÍ÷ (2000ǯ¡Á2006ǯ¤Ï¤³¤Á¤é)

1. ë¸ýÍÛ»Ò¡¤À¾Ãæ¹ÀÇ·¡¤ÅçźÏ¼ù¡¤À¼ÉÒ¹¬¡¤¾â¥±¹¾°ì¹§¡¤µÈËܾ»¹­¡¢¡Ö²Ä»ë¸÷±þÅú·¿¸÷¿¨ÇÞ±þÍѤ˸þ¤±¤¿ Bi ź²ÃIn2O3 ÇöË줪¤è¤Ó¥Ê¥Î¥í¥Ã¥É¤ÎºîÀ½¤È¤½¤Î¸÷³ØÆÃÀ­É¾²Á¡×¡¡ºàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥í¥È¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÂè3²ó¸¦µæ²ñ, Ä»¼èÂç³Ø¡ÊÄ»¼è¡Ë¡¤2024/1, T-13.
2. ¾åÅÄÎË¡¤Ä¹Ã«Àî¾­¡¤À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¢¡Ö¥é¥Þ¥óʬ¸÷Ë¡¤Ë¤è¤ëp ·¿GaAsBi ¤ÎÀµ¹¦°ÜÆ°ÅÙ»»½Ð¡×¡¡ºàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥í¥È¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÂè3²ó¸¦µæ²ñ, Ä»¼èÂç³Ø¡ÊÄ»¼è¡Ë¡¤2024/1, T-12.
3. ÅÏîµ·¼Í¤¡¤À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¢¡Öȯ¸÷¥Ç¥Ð¥¤¥¹±þÍѤ˸þ¤±¤¿Cs-Cu-I ·Ï¤Î¥Þ¥¤¥¯¥í¥í¥Ã¥ÉÀ®Ä¹¤ÈʪÀ­É¾²Á¡×¡¡ºàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥í¥È¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÂè3²ó¸¦µæ²ñ, Ä»¼èÂç³Ø¡ÊÄ»¼è¡Ë¡¤2024/1, T-7.
4. ²ÃǼÂçÀ®¡¤¿·ÅÄͪÂÁ¡¤À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¢¡ÖÇ®¤Î½ÐÆþ¤ê¤òÀ©¸æ²Äǽ¤Ê¥¹¥Þ¡¼¥È¥¦¥¤¥ó¥É¥¦¤Ë¸þ¤±¤¿N ¥É¡¼¥×VO2 ÇöËì¤Ë´Ø¤¹¤ë¸¦µæ¡×¡¡ºàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥í¥È¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÂè3²ó¸¦µæ²ñ, Ä»¼èÂç³Ø¡ÊÄ»¼è¡Ë¡¤2024/1, T-6.
5. ¶áÆ£ÎÉ¡¤ÅçźÏ¼ù¡¤ À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¢¡Ö¦Á-(Ga,Fe)2O3¸÷ÅŶˤΥߥ¹¥ÈCVDÀ®Ä¹¤È¤½¤Îɾ²Á¡× Âè52²ó·ë¾½À®Ä¹¹ñÆâ²ñµÄ¡ÊJCCG-52¡Ë, ¥¦¥¤¥ó¥¯¤¢¤¤¤Á(°¦ÃÎ), 2023/12, 06a-P14.
6. ÅçźÏ¼ù¡¤ À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¢¡Ö¥³¥é¥ó¥À¥à¹½Â¤»À²½Êª¥Ø¥Æ¥í¹½Â¤¤Î¥ß¥¹¥ÈCVDÀ®Ä¹¤È¥Ç¥Ð¥¤¥¹±þÍÑ¡× Âè52²ó·ë¾½À®Ä¹¹ñÆâ²ñµÄ¡ÊJCCG-52¡Ë, ¥¦¥¤¥ó¥¯¤¢¤¤¤Á(°¦ÃÎ), 2023/12, 06a-P13.
7. ²ÃÆ£µ®Âç, À¾Ãæ¹ÀÇ·, ÅçźÏ¼ù¡¤µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥È CVD Ë¡¤Ë¤è¤ë¥Ó¥Ã¥¯¥¹¥Ð¥¤¥È¹½Â¤ ¦Ä-Ga2O3 ÇöËì¤òÍѤ¤¤¿»ç³°¸÷¸¡½Ð´ï¡× Âè20²óÇöËìºàÎÁ¥Ç¥Ð¥¤¥¹¸¦µæ²ñ, ζëÂç³Ø¶ÁÅÔ¥Û¡¼¥ë(µþÅÔ), 2023/11, 10p-P04.
8. ²ÃǼÂçÀ®¡¤¿·ÅÄͪÂÁ¡¤À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖInvestigation of Mist CVD-Grown N-Doped VO2 Thin Films for Smart Window Applications¡×The 42th Electronic Materials Symposium, EMS, ÆàÎÉ, 2023/10, Th3-6.
9. ÅçźÏ¼ù¡¤À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖRealizing Vertical Corundum-Structured Oxide Devices with Rhombohedral Indium Tin Oxide Bottom Electrode¡×The 42th Electronic Materials Symposium, EMS, ÆàÎÉ, 2023/10, We2-7.
10. Êݺä¾ÍÇÏ¡¤À¾Ãæ¹ÀÇ·¡¤¾®Àîŵ¿¿¡¤»°Âð͵¼ù¡¤µÈËܾ»¹­¡¢ ¡Ö¥ß¥¹¥ÈCVD¤Ë¤è¤ëSi¥É¡¼¥×¦Â-Ga2O3ÇöËì¤Î¥Û¥â¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè84²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ¡¤±þÍÑʪÍý³Ø²ñ, ·§Ëܾë¥Û¡¼¥ë¡¤2023/9.
11. ²ÃǼÂçÀ®¡¤¿·ÅÄͪÂÁ¡¤À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¢ ¡Ö¥ß¥¹¥È CVD ¤Ë¤è¤ë¥¹¥Þ¡¼¥È¥¦¥¤¥ó¥É¥¦¤ä¥µ¡¼¥â¥¯¥í¥ß¥Ã¥¯±þÍѤ˸þ¤±¤¿N¥É¡¼¥×VO2ÇöËì¤Î·ÁÀ®µÚ¤ÓʪÀ­É¾²Á¡×¡¡Âè84²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ¡¤±þÍÑʪÍý³Ø²ñ, ·§Ëܾë¥Û¡¼¥ë¡¤2023/9.
12. ÅÄÃæ¾­¡¤À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¤ÌîÅļ¡¢ ¡Ö¥ß¥¹¥È CVD Ë¡ Hf0.5Zr0.5O2 ¶¯Í¶ÅÅÂÎÇöËì¤ÎÅŵ¤ÅªÆÃÀ­¤Î²þÁ±¡×¡¡Âè84²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ¡¤±þÍÑʪÍý³Ø²ñ, ·§Ëܾë¥Û¡¼¥ë¡¤2023/9.
13. À¾Ãæ¹ÀÇ·¡¢¡Ö»À²½¥¬¥ê¥¦¥à(Ga2O3)¤Î·ë¾½À®Ä¹¡¦ÇöËì·ÁÀ®¤È¥Ç¥Ð¥¤¥¹±þÍÑ¡×(°ÍÍê¹Ö±é)¡¡¥µ¥¤¥¨¥ó¥¹&¥Æ¥¯¥Î¥í¥¸¡¼¼Ò, ¥ª¥ó¥é¥¤¥ó¡¤2023/7.
14. ÅçźÏ¼ù, À¾Ãæ¹ÀÇ·¡¤Ã«¸ýÍÛ»Ò¡¤¾â¥±¹¾°ì¹§¡¤µÈËܾ»¹­¡¢¡ÖÇÛ¸þÀ©¸æ¤·¤¿»À²½Å´¸÷ÅŶˤΥߥ¹¥ÈCVDÀ®Ä¹¤È¤½¤Îɾ²Á¡×ÆüËܲ½³Ø²ñ Âè103½Õµ¨Ç¯²ñ, ÆüËܲ½³Ø²ñ, ÅìµþÍý²ÊÂç³Ø, 2023/3.
15. ¹ñ¶¶Í׻ʡ¤¼Ä¸¶¹¯¡¤Ä¹Ã«Àî¾­¡¤À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¤¾®·ª¹îÌ¸åÆ£½¨¼ù¡¤¹¥ÅÄÀ¿¡¤¿·ÅĽߺâÃÅļ£¼ù¡¢¡ÖGaAsBi¥¨¥Ô¥¿¥­¥·¥ã¥ëÇöËì¤Ë¤ª¤±¤ë¥¹¥Ô¥óµ°Æ»Áê¸ßºîÍѥѥé¥á¡¼¥¿¤ÎÄêÎÌɾ²Á¡×Âè70²ó±þÍÑʪÍý³Ø²ñ½Õµ¨¡¤³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¾åÃÒÂç³Ø, 2023/3.
16. ¾åÅĽ¤, À¾Ãæ¹ÀÇ·¡¤Ãӱʷ±¾¼, Ï¡ÃÓµª¹¬¡¤µÈËܾ»¹­¡¢¡Ö(001) FZÀ®Ä¹¦Å-GaFeO3´ðÈľå¤Ë¥ß¥¹¥ÈCVDÀ®Ä¹¤·¤¿¦Ê-(InxGa1-x)2O3ÇöËìÃæ¤Î·ç´Ù¤ÎTEMɾ²Á¡×Âè70²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¾åÃÒÂç³Ø, 2023/3.
17. ¾åÅÄÎË, À¾Ãæ¹ÀÇ·¡¤±Ê²¬Ã£»Ê, »°Âð͵¼ù¡¤µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë(001) ¦Â-Ga2O3ÇöËì¤Î¥Û¥â¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×Âè70²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¾åÃÒÂç³Ø, 2023/3.
18. ÅçźÏ¼ù, À¾Ãæ¹ÀÇ·¡¤²ÃÆ£µ®Âç, ë¸ýÍÛ»Ò¡¤¾â¥±¹¾°ì¹§¡¤µÈËܾ»¹­¡¢¡Ö¦Á-Ga2O3/rh-ITO¹½Â¤¤Î¥Ø¥Æ¥í¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¤È¿¼»ç³°¥Õ¥©¥È¥Ç¥£¥Æ¥¯¥¿¤Î»îºî¡×Âè70²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¾åÃÒÂç³Ø, 2023/3.
19. À¾Ãæ¹ÀÇ·¡¢¡ÖGa2O3¤Î·ë¾½À®Ä¹¤È¤½¤ÎÆÃÀ­É¾²Á¡§HEMT±þÍѤ¬´üÂÔ¤µ¤ì¤ë¿·µ¬Áê¤Î¦Ê-Ga2O3¡×(¾·ÂÔ¹Ö±é)¡¡¡ÊÆÈ¡ËÆüËܳؽѿ¶¶½²ñÂèR032°Ñ°÷²ñ Âè11 ²ó¸¦µæ²ñ¡Ö¥Ñ¥ï¡¼´ØϢȾƳÂΤξ­ÍèŸ˾¡×, ¥Ï¥¤¥Ö¥ê¥Ã¥É¡ÊÅìµþÂç³Ø¡Ë¡¤2023/3.
20. ¾®ÁÒÍ­è½, ¿·ÅÄͪÂÁ, ÃÓÇ·¾åÂî¸Ê, ¾â¥±¹¾°ì¹§ ,À¾Ãæ¹ÀÇ·, µÈËÜ ¾»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëYSZ´ðÈľ奢¥ó¥É¡¼¥×¤ª¤è¤ÓSn¥É¡¼¥×hexagonal-InGaO3º®¾½ÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡× Âè32²óÆüËÜMRSǯ¼¡Âç²ñ, MRS-J, »º¶ÈËÇ°×¥»¥ó¥¿¡¼¥Ó¥ë¡Ê²£ÉÍ¡Ë, 2022/11, P-O6-014.
21. ¶â»Ò¿¿Â硤À¾Ãæ¹ÀÇ·¡¤¾â¥±¹¾°ì¹§¡¤µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤òÍѤ¤¤¿(010)¦Â-Ga2O3´ðÈľå¤Ø¤Î¦Â-(AlxGa1-x)2O3/¦Â-(InxGa1-x)2O3ÇöËì¤ÎÀ®Ä¹¡×¡¡ºàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥í¥È¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÂè2²ó¸¦µæ²ñ, 2022ǯÅÙÂè1²ó¥Ê¥ÎºàÎÁÉôÌç°Ñ°÷²ñÂè1²ó¸¦µæ²ñ, µþÅÔÂç³Ø¡¤ 2022/11.
22. À¾Ãæ¹ÀÇ·¡Ö»À²½¥¬¥ê¥¦¥à¤ÎÇöËì·ÁÀ®µ»½Ñ¤È¤½¤Î³«È¯Æ°¸þ¡×(¾·ÂÔ¹Ö±é(¥Á¥å¡¼¥È¥ê¥¢¥ë))¡¡ÇöËìºàÎÁ¥Ç¥Ð¥¤¥¹¸¦µæ²ñÂè19²ó¸¦µæ½¸²ñ¡¤Î¶Ã«Âç³Ø¶ÁÅÔ¥Û¡¼¥ë(µþÅÔ), 2022/11.
23. ë¸ýÍÛ»Ò, À¾Ãæ¹ÀÇ·¡¤ÅçźÏ¼ù¡¤À¼ÉÒ¹¬¡¤¾â¥±¹¾°ì¹§, µÈËܾ»¹­¡¢¡ÖVisible-light responsive photocatalyst of Bismuth incorporation into In2O3 thin films by mist CVD¡×The 41th Electronic Materials Symposium, EMS, ÆàÎÉ, 2022/10.
24. ¾åÅÄÎË, ĹëÀî¾­¡¤¾â¥±¹¾°ì¹§, À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¢¡ÖRaman spectroscopic determination of hole mobility in p-type GaAsBi¡×The 41th Electronic Materials Symposium, EMS, ÆàÎÉ, 2022/10.
25. ²ÃÆ£µ®Âç, À¾Ãæ¹ÀÇ·¡¤ÅçźÏ¼ù¡¤¾â¥±¹¾°ì¹§, µÈËܾ»¹­¡¢¡ÖEpitaxial growth of bixbyite structured delta-Ga2O3 thin films using the same structured beta-Fe2O3 buffer layers by Mist CVD¡×The 41th Electronic Materials Symposium, EMS, ÆàÎÉ, 2022/10.
26. ÀÄÌÚεºÈ, ĹëÀî¾­¡¤ÀîÅÄÂçÌ´¡¤¾â¥±¹¾°ì¹§, À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¢¡ÖFabrication of GaNAsBi?/GaAs multi-quantum-well light-emitting-diodes¡×The 41th Electronic Materials Symposium, EMS, ÆàÎÉ, 2022/10.
27. ¶â»Ò¿¿Âç, À¾Ãæ¹ÀÇ·, ¾â¥±¹¾°ì¹§, µÈËܾ»¹­¡¢¡ÖEpitaxial growth of ¦Â-(AlxGa1-x)2O3 thin films on (010) ¦Â-Ga2O3 substrates by mist CVD¡×The 41th Electronic Materials Symposium, EMS, ÆàÎÉ, 2022/10.
28. ÅÏîµ·¼Í¤, À¾²¬ÍªºÈ, À¾Ãæ¹ÀÇ·, ¾â¥±¹¾°ì¹§, µÈËܾ»¹­¡¢¡ÖCu·Ïȯ¸÷ºàÎÁCs3Cu2I5ÇöËì¤ÎMn2+​¥É¡¼¥Ô¥ó¥°¤Ë¤è¤ë¸÷³ØŪÆÃÀ­À©¸æ¡×¡¡Âè83²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ÅìËÌÂç³Ø, 2022/9.
29. ¾®Àîŵ¿¿, À¾Ãæ¹ÀÇ·, ÅçźÏ¼ù, ¾â¥±¹¾°ì¹§, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëGe¥É¡¼¥×¦Â-Ga2O3ÇöËì¤Î¥Û¥â¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè83²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ÅìËÌÂç³Ø, 2022/9.
30. ²ÃÆ£µ®Âç, À¾Ãæ¹ÀÇ·, ÅçźÏ¼ù, ¾â¥±¹¾°ì¹§, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Â-Fe2O3¥Ð¥Ã¥Õ¥¡ÁؤòÍѤ¤¤¿¦Ä-Ga2O3¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè83²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ÅìËÌÂç³Ø, 2022/9.
31. ¶â»Ò¿¿Âç, À¾Ãæ¹ÀÇ·, ¾â¥±¹¾°ì¹§, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Â-(AlxGa1-x)2O3/¦Â-(InxGa1-x)2O3/¦Â-Ga2O3ÇöËì¤Î¥Ø¥Æ¥í¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè83²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ÅìËÌÂç³Ø, 2022/9.
32. ĹëÀî¾­, Ï¡ÃÓµª¹¬, ¾â¥±¹¾°ì¹§, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥é¥Þ¥óʬ¸÷Ë¡¤Ë¤è¤ëGaAs/GaAsBi¹½Â¤Ãæ¤Î¸÷Î嵯¥­¥ã¥ê¥¢¤ÎÆÃÀ­É¾²Á¡×¡¡Âè83²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ÅìËÌÂç³Ø, 2022/9.
33. À¾Ãæ¹ÀÇ·, ¾åÅĽ¤, Ç÷½¨¼ù,¡¡Ãӱʷ±¾¼, µÜ¸ÍÍ´¼£, Ï¡ÃÓµª¹¬, ¾â¥±¹¾°ì¹§, µÈËܾ»¹­¡¢¡Ö¦Å-GaFeO3´ðÈĤòÍѤ¤¤¿Ã±°ì¥É¥á¥¤¥ó¦Ê-Ga2O3¤ÎÀ®Ä¹¡×¡¡Âè83²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ÅìËÌÂç³Ø, 2022/9.
34. ÅçźÏ¼ù, À¾Ãæ¹ÀÇ·, ë¸ýÍÛ»Ò, ¾â¥±¹¾°ì¹§, µÈËܾ»¹­¡¢¡Ö»À²½Å´¸÷ÅŶˤΥߥ¹¥ÈCVDÀ®Ä¹¤È¤½¤Îɾ²Á¡×¡¡Âè83²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ÅìËÌÂç³Ø, 2022/9.
35. ë¸ýÍÛ»Ò, ÅçźÏ¼ù, À¾Ãæ¹ÀÇ·, À¼ÉÒ¹¬, ¾â¥±¹¾°ì¹§, µÈËܾ»¹­¡¢¡ÖBiź²ÃIn2O3ÇöËì¤Ë¤è¤ë²Ä»ë¸÷±þÅú·¿¸÷¿¨ÇÞÈ¿±þ¤Îɾ²Á¡×¡¡Âè83²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ÅìËÌÂç³Ø, 2022/9.
36. À¾Ãæ¹ÀÇ·¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Î´ðÁäȻÀ²½¥¬¥ê¥¦¥à¤Î¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¤Ø¸þ¤±¤¿·ë¾½À®Ä¹¡¦ÇöËì·ÁÀ®µ»½Ñ¡×(°ÍÍê¹Ö±é)¡¡R&D»Ù±ç¥»¥ó¥¿¡¼¼Ò, ¥ª¥ó¥é¥¤¥ó¡¤2022/8.
37. Åçź Ï¼ù¡¤À¾Ãæ ¹ÀÇ·¡¤Ã«¸ý ÍÛ»Ò¡¤¾â¥±¹¾°ì¹§¡¢µÈËÜ ¾»¹­¡¢ ¡Ö¥³¥é¥ó¥À¥à¹½Â¤¥¹¥ºÅº²Ã»À²½¥¤¥ó¥¸¥¦¥à¤ò²¼ÉôÅŶˤËÍѤ¤¤¿»À²½Å´¿Í¹©¸÷¹çÀ®¸þ¤±¸÷ÅŶˤκîÀ½¡×¡¡Âè41²ó¸÷¤¬¤«¤«¤ï¤ë¿¨ÇÞ²½³Ø¥·¥ó¥Ý¥¸¥¦¥à¡¤¥ª¥ó¥é¥¤¥ó, 2022/7.
38. ÅçźÏ¼ù¡¤Æ£¸¶Íª´õ¡¤ÅÄÃæ¾­¡¤À¾Ãæ¹ÀÇ·¡¤µÈËÜ ¾»¹­¡¤ÌîÅļ¡¢ ¡Ö¥³¥é¥ó¥À¥à¹½Â¤¤òÍ­¤¹¤ërh-ITO¾å¤Ø¤ÎHfxZr1-xO2ÇöËì¤Î¥ß¥¹¥ÈCVDÀ®Ä¹¤È¤½¤Îɾ²Á¡×¡¡Âè39²ó¶¯Í¶ÅÅÂβñµÄ¡¤µþÅÔ¹©·ÝÁ¡°ÝÂç³Ø, 2022/6.
39. Æ£¸¶Íª´õ¡¤ÅÄÃæ¾­¡¤À¾Ãæ¹ÀÇ·¡¤µÈËÜ ¾»¹­¡¤ÌîÅļ¡¢ ¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëHfxZr1-xO2¶¯Í¶ÅÅÂÎÇöËì¤ÎÇ®½èÍý¾ò·ï¤ª¤è¤ÓÀ®Ä¹´ðÈװ͸À­¤Î¸¡Æ¤¡×¡¡Âè39²ó¶¯Í¶ÅÅÂβñµÄ¡¤µþÅÔ¹©·ÝÁ¡°ÝÂç³Ø, 2022/6.
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42. ĹëÀî¾­, Ï¡ÃÓµª¹¬, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖGa(N)As(Bi)º®¾½¤Ë¤ª¤±¤ë¸÷Î嵯¤µ¤ì¤¿¥­¥ã¥ê¥¢¤¬¥é¥Þ¥ó¥¹¥Ú¥¯¥È¥ë¤ËµÚ¤Ü¤¹±Æ¶Á¡×¡¡Âè69²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ,ÀÄ»³³Ø±¡Âç³Ø, 2022/3.
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44. À¾Ãæ¹ÀÇ·¡¢¡Ö»À²½¥¬¥ê¥¦¥à(Ga2O3)¤Î·ë¾½À®Ä¹¡¦ÇöËì·ÁÀ®¤È¥Ç¥Ð¥¤¥¹±þÍÑ¡×(°ÍÍê¹Ö±é)¡¡¥µ¥¤¥¨¥ó¥¹&¥Æ¥¯¥Î¥í¥¸¡¼¼Ò, ¥ª¥ó¥é¥¤¥ó¡¤2022/3.
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46. ÀîÅÄÂçÌ´¡¤Ä¹Ã«Àî¾­¡¤À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¢¡Ö¥Ø¥Æ¥í³¦Ì̤ؤÎBiÁÈÀ®·¹¼ÐÁØÁÞÆþ¤Ë¤è¤ëGaAs/GaAsBi PIN¥À¥¤¥ª¡¼¥É¤Î¸÷ÅÅÆÃÀ­²þÁ±¡×¡¡ºàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥í¥È¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÂè3²ó¸¦µæ²ñ, ¥ª¥ó¥é¥¤¥ó¡Ê¹­ÅçÂç³Ø¡Ë¡¤ 2022/1.
47. ë¸ý ÍÛ»Ò¡¤Åçź Ï¼ù¡¤À¾Ãæ ¹ÀÇ·¡¤µÈËÜ ¾»¹­¡¢ ¡ÖBiź²ÃIn2O3¤Î¸÷³ØŪÆÃÀ­É¾²Á¡×¡¡Âè31²óÆüËÜMRSǯ¼¡Âç²ñ¡¤ÆüËÜMRS, ¥ª¥ó¥é¥¤¥ó¡Ê¥Ñ¥·¥Õ¥£¥³²£ÉͥΡ¼¥¹¡Ë, 2021/12.
48. Åçź Ï¼ù¡¤À¾Ãæ ¹ÀÇ·¡¤ÀÐÌî µ®Ç·¡¤ÅÏ¡·¼Í¤¡¤µÈËÜ ¾»¹­¡¢ ¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¥¹¥ºÅº²Ã»À²½¥¤¥ó¥¸¥¦¥àµÚ¤Ó¥Õ¥ÃÁÇź²Ã»À²½¥¹¥ºÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè31²óÆüËÜMRSǯ¼¡Âç²ñ¡¤ÆüËÜMRS, ¥ª¥ó¥é¥¤¥ó¡Ê¥Ñ¥·¥Õ¥£¥³²£ÉͥΡ¼¥¹¡Ë, 2021/12.
49. ÀÐÌî µ®Ç·¡¤Åçź Ï¼ù¡¤À¾Ãæ ¹ÀÇ·¡¤µÈËÜ ¾»¹­¡¢ ¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Á-Al2O3´ðÈľå¤Îrh-IMOÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¤È¤½¤Îɾ²Á¡×¡¡Âè31²óÆüËÜMRSǯ¼¡Âç²ñ¡¤ÆüËÜMRS, ¥ª¥ó¥é¥¤¥ó¡Ê¥Ñ¥·¥Õ¥£¥³²£ÉͥΡ¼¥¹¡Ë, 2021/12.
50. À¾Ãæ¹ÀÇ·¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ç¤Î¦ÊÁꤪ¤è¤Ó¦ÃÁêGa2O3·ë¾½¤ÎÀ®Ä¹¤Èɾ²Á¡×(¾·ÂÔ¹Ö±é)¡¡¡ÊÆÈ¡ËÆüËܳؽѿ¶¶½²ñ¡Ö·ë¾½²Ã¹©¤Èɾ²Áµ»½Ñ¡×Âè145 °Ñ°÷²ñ Âè173 ²ó¸¦µæ²ñ, ¥ª¥ó¥é¥¤¥ó¡¤2021/12.
51. À¾Ãæ¹ÀÇ·¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¾Ê¥¨¥Í¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹Ga2O3¤Î·ÁÀ®µ»½Ñ¡×(¾·ÂÔ¹Ö±é)¡¡´ØÀ¾¹­°èÏ¢¹ç¥°¥ê¡¼¥ó¡¦¥¤¥Î¥Ù¡¼¥·¥ç¥ó¸¦µæÀ®²Ì´ë¶È²½¥Õ¥©¡¼¥é¥à, Âçºå¡¤2021/11.
52. ¾®ÁÒͭ轡¤ÃÓÇ·¾åÂî¸Ê¡¤¿·ÅÄͪÂÁ¡¤À¾Ãæ¹ÀÇ·¡¤µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¿¼»ç³°Æ©ÌÀƳÅÅËì¤Ø¤Î±þÍѤ˸þ¤±¤¿¡ÊInxGa1-x)2O3º®¾½ÇöËì¤ÎÀ®Ä¹¡×¡¡ºàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥í¥È¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÂè2²ó¸¦µæ²ñ, ¥ª¥ó¥é¥¤¥ó¡ÊµþÅÔ¹©·ÝÁ¡°ÝÂç³Ø¡Ë¡¤ 2021/11.
53. À¾²¬ ͪºÈ, ÅÏîµ ·¼Í¤, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­¡¢ ¡Ö¥ß¥¹¥È¥Ç¥Ý¥¸¥·¥ç¥óË¡¤òÍѤ¤¤¿Cs3Cu2I5¤ÎÇöËì·ÁÀ®¡×¡¡Âè82²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/9.
54. ÅÏîµ ·¼Í¤, À¾²¬ ͪºÈ, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­¡¢ ¡Ö¥ß¥¹¥È¥Ç¥Ý¥¸¥·¥ç¥óË¡¤Ë¤è¤ëº®¾½·Ïȯ¸÷ºàÎÁCs3Cu2(I1-xBrx)5 (0¡åx¡å1)¤ÎÇöËìÀ®Ä¹¤È¸÷³ØŪÆÃÀ­¡×¡¡Âè82²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/9.
55. ÀÐÌî µ®Ç·, Åçź Ï¼ù, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­¡¢ ¡Ö¥ß¥¹¥ÈCVDË¡¤òÍѤ¤¤¿YSZ(111)ÌÌ´ðÈľå¤ÎIMOÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¤È¤½¤Îɾ²Á¡×¡¡Âè82²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/9.
56. ¶â»Ò ¿¿Âç, ËÙ¹¾ εÅÍ, ³áÅÄ¡¡Í¥µ¤, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­¡¢ ¡Ö¥ß¥¹¥È CVD Ë¡¤Ë¤è¤ë¦Â-(AlxGa1-x)2O3º®¾½ÇöËìÀ®Ä¹¡×¡¡Âè82²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/9.
57. Åçź Ï¼ù, Æ£¸¶ ͪ´õ, ¿·ÅÄ ÍªÂÁ, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­, ÌîÅÄ ¼Â¡¢ ¡Ö¥ß¥¹¥ÈCVDË¡¤òÍѤ¤¤¿rh-ITO¥¨¥Ô¥¿¥­¥·¥ã¥ëÇöËì¾å¤Ø¤ÎHfxZr1-xO2ÇöËìÀ®Ä¹¡×¡¡Âè82²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/9.
58. ĹëÀî ¾­, Manuel Fregolent, Matteo Buffolo, Carlo Santi, Gaudenzio Meneghesso, Enrico Zanoni, ¾¾Â¼ Æ×ÂÀ, À¾Ãæ ¹ÀÇ·, Matteo Meneghini, µÈËÜ ¾»¹­¡¢ ¡ÖDLTS Ë¡¤Ë¤è¤ë n-GaAsBi Ãæ¤Î¿¼¤¤½à°Ì¤Îɾ²Á¡×¡¡Âè82²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/9.
59. ĹëÀî ¾­, ÀîÅÄ ÂçÌ´, ÀÄÌÚ ÎµºÈ, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­¡¢ ¡ÖGaNAsBi?/GaAs¿½ÅÎ̻Ұæ¸Í¹½Â¤¤ÎMBEÀ®Ä¹¡×¡¡Âè82²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/9.
60. ¾®ÁÒ Í­è½, ¿·ÅÄ ÍªÂÁ, ÃÓÇ·¾å Âî¸Ê, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­¡¢ ¡Ö¿¼»ç³°Æ©ÌÀƳÅÅËì¤Ø¤Î±þÍѤ˸þ¤±¤¿(InxGa1¡Ýx)2O3º®¾½ÇöËì¤ÎÀ®Ä¹¤È¤½¤Îɾ²Á¡×¡¡Âè82²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/9.
61. ³áÅÄ¡¡Í¥µ¤, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­¡¢ ¡Ö¥ß¥¹¥ÈCVDË¡¤òÍѤ¤¤¿¦Â-(InxGa1-x)2O3ÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè82²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/9.
62. Æ£¸¶ ͪ´õ, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­, ÌîÅÄ ¼Â¡¢ ¡ÖÀ½Ëì¸åRTA½èÍý¤·¤¿¥ß¥¹¥ÈCVD HfxZr1-xO2ÇöËì¤Î³ÆÆÃÀ­¡×¡¡Âè82²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/9.
63. Æ£¸¶ ͪ´õ, ÂçÀ¾ ½áºÈ, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­, ÌîÅÄ ¼Â¡¢ ¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë(HfxZr1-x)O2ÇöËìÆÃÀ­¤ÎÀ½Ëì¸åRTA°Í¸À­¡×¡¡Âè38²ó¶¯Í¶ÅÅÂαþÍѲñµÄ, ¥ª¥ó¥é¥¤¥ó, 2021/6.
64. ïð ͵²ð , ²¬ÅÄ Í­»Ë, ³áÅÄ Í¥µ¤, À¾Ãæ ¹ÀÇ·, Ferreyra Romualdo A., ¾åÅÄ Âç½õ, ³ÑÌî ¹­Ê¿¡¢ ¡Ö¦Â-Ga2O3(-201)ɽÌ̤ˤª¤±¤ëNiO¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹½é´ü²áÄø¤ÎSPM´Ñ»¡¡×¡¡Âè68²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/3.
65. Æ£¸¶ ͪ´õ, ÂçÀ¾ ½áºÈ, À¾Ãæ ¹ÀÇ·, µÈËÜ ¾»¹­, ÌîÅÄ ¼Â¡¢ ¡Ö¥ß¥¹¥ÈCVDË¡HfxZr1-xO2ÇöËìÆÃÀ­¤ÎÀ½Ëì¸åRTA°Í¸À­¡×¡¡Âè68²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/3.
66. À¾Ãæ¹ÀÇ·¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëGa2O3¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹µ»½Ñ¡×(¾·ÂÔ¹Ö±é)¡¡ÆüËÜÈľ˻ҺàÎÁ¹©³Ø½õÀ®²ñ¡¡Âè38²ó̵µ¡ºàÎÁ¤Ë´Ø¤¹¤ëºÇ¶á¤Î¸¦µæÀ®²Ìȯɽ²ñ, ¥ª¥ó¥é¥¤¥ó, 2021/1.
67. À¾Ãæ¹ÀÇ·¡¢¡ÖGa2O3 ¤ÎÃæ´Ö½à°Ì¤òÍøÍѤ·¤¿ p ·¿ÅÁƳ¤Ë¸þ¤±¤¿¸¡Æ¤¡×(¾·ÂÔ¹Ö±é)¡¡ÆüËܳؽѿ¶¶½²ñ¡¡·ë¾½²Ã¹©¤Èɾ²Áµ»½Ñ¡¡Âè145°Ñ°÷²ñ¡¡Âè169²ó¸¦µæ²ñ»ñÎÁ, ¥ª¥ó¥é¥¤¥ó, 2020/12.
68. À¾Ãæ¹ÀÇ·¡¢¡ÖHEMT±þÍѤ˸þ¤±¤¿¦Ê-Ga2O3¤Î·ë¾½À®Ä¹µ»½Ñ¡×(¾·ÂÔ¹Ö±é)¡¡ÅŻҾðÊóÄÌ¿®³Ø²ñ SDM/EID/ITE-IDY ¸¦µæ²ñ, ¥ª¥ó¥é¥¤¥ó, 2020/12.
69. À¾Ãæ¹ÀÇ·¡¢¡Ö¥ß¥¹¥ÈCVD¤Ë¤è¤ë¦Ê-»À²½¥¬¥ê¥¦¥à¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×(¾·ÂÔ¹Ö±é)¡¡Âè71²óCVD¸¦µæ²ñ, ¥ª¥ó¥é¥¤¥ó¡ÊµþÅÔÂç³Ø¡Ë, 2020/10.
70. Y. Arata, H. Nishinaka, K. Shimazoe, Y. Ito, and M. Yoshimoto, " Epitaxial growth of various p- and n-type oxide thin films on flexible synthetic mica using mist chemical vapor deposition" The 39th Electronic Materials Symposium, ¥ª¥ó¥é¥¤¥ó, 2020/10.
71. K. Shimazoe, H. Nishinaka, Y. Arata, Y. Ito, and M. Yoshimoto, " Growth of Metastable Rhombohedral Structured Oxides Using Alpha-Fe2O3 Buffer Layers via Mist CVD Method" The 39th Electronic Materials Symposium, ¥ª¥ó¥é¥¤¥ó, 2020/10.
72. ¿·ÅÄͪÂÁ, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤òÍѤ¤¤¿¥Õ¥ì¥­¥·¥Ö¥ë¤ÊZnOÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¤ª¤è¤Ó¸÷³ØŪÆÃÀ­¤Îɾ²Á¡×¡¡Âè81²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó¡ÊƱ»Ö¼ÒÂç³Ø¡Ë, 2020/9.
73. Æ£¸¶Íª´õ, Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢ÌîÅļ¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëHf1-xZrxO2ÇöËì¤Î¶¯Í¶ÅÅÂÎ¥·¥Ê¥×¥¹ÁǻұþÍѤ˴ؤ¹¤ë´ðÁÃŪ¸¡Æ¤¡×¡¡Âè81²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó¡ÊƱ»Ö¼ÒÂç³Ø¡Ë, 2020/9.
74. ³áÅÄÍ¥µ¤, À¾Ãæ¹ÀÇ·, ¿·ÅÄ ÍªÂÁ, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤òÍѤ¤¤Æ(-201) ¦Â-Ga2O3´ðÈľå¤ËÀ®Ä¹¤·¤¿¦Ê-Ga2O3ÇöËì¤Î¹½Â¤²òÀϡס¡Âè81²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó¡ÊƱ»Ö¼ÒÂç³Ø¡Ë, 2020/9.
75. ÀîÅÄ ÂçÌ´, ĹëÀî ¾­, ¾¾Â¼ ½ßÂÀ, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö»Í¸µº®¾½GaNAsBi?ÂÀÍÛÅÅÃÓ¤ÎÀ½ºî¤ÈÇ®½èÍý¤Ë¤è¤ëÆÃÀ­²þÁ±¡×¡¡Âè81²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó¡ÊƱ»Ö¼ÒÂç³Ø¡Ë, 2020/9.
76. Åçź Ï¼ù, À¾Ãæ¹ÀÇ·, ¿·ÅÄ ÍªÂÁ, °ËÆ£ ͺʹ, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëLiTaO3´ðÈľå¤Ø¤Î¥Ð¥Ã¥Õ¥¡ÁؤòÍѤ¤¤Ê¤¤rh-ITO¥¨¥Ô¥¿¥­¥·¥ã¥ëÇöËì¤ÎÀ®Ä¹¤È¤½¤Îɾ²Á¡×¡¡Âè81²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó¡ÊƱ»Ö¼ÒÂç³Ø¡Ë, 2020/9.
77. ËÙ¹¾ εÅÍ, Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥¹¥Ô¥Í¥ë´ðÈľå¤Ë³Ê»ÒÀ°¹ç¤·¤ÆÀ®Ä¹¤·¤¿¦Ã-(AlxGa1-x)2O3º®¾½ÇöËì¤Î³¦Ì̤η뾽¹½Â¤²òÀϡס¡Âè81²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¥ª¥ó¥é¥¤¥ó¡ÊƱ»Ö¼ÒÂç³Ø¡Ë, 2020/9.
78. ÀîÅÄ ÂçÌ´, ĹëÀî ¾­, ¾¾Â¼ ½ßÂÀ, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖGaAs/GaNAsBi? ÂÀÍÛÅÅÃÓ¤ÎÀ½ºî¤ÈÇ®½èÍý¤Ë¤è¤ëÆÃÀ­²þÁ±¡×¡¡ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÎáÏÂ2ǯÅÙÂè1²ó¸¦µæ²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, ¥ª¥ó¥é¥¤¥ó¡ÊÂçºåÂç³Ø¡Ë, 2020/8.
79. Åçź Ï¼ù, À¾Ãæ¹ÀÇ·, ¿·ÅÄ ÍªÂÁ, °ËÆ£ ͺʹ, µÈËܾ»¹­¡¢¡Ö»À²½Å´¤òÍѤ¤¤¿½à°ÂÄê»À²½ÊªÈ¾Æ³ÂΤη뾽ÁêÀ©¸æ¡×¡¡ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÎáÏÂ2ǯÅÙÂè1²ó¸¦µæ²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, ¥ª¥ó¥é¥¤¥ó¡ÊÂçºåÂç³Ø¡Ë, 2020/8.
80. Yoji Kunihashi, Yusuke Tanaka, Haruki Sanada, Takehiko Tawara, Makoto Kohda, Junsaku Nitta, Sho Hasegawa, Hiroyuki Nishinaka, Masahiro Yoshimoto, and Hideki Gotoh, "Magnetically-induced spin component in GaAsBi epilayer "¡¡Âè67²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2020/3.
81. °Ëƣͺʹ, Æ£¸¶Íª´õ, À¾Ãæ¹ÀÇ·, Åĸ¶ÂçÍ´, ÅçźÏ¼ù, ¿·ÅÄͪÂÁ, ÌîÅļÂ, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ërh-ITO¾å¤Î¦Å-Ga2O3ÇöËìÀ®Ä¹¤ÈÅŵ¤ÅªÆÃÀ­É¾²Á¡×¡¡Âè67²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2020/3.
82. ¿·ÅÄͪÂÁ, À¾Ãæ¹ÀÇ·, ÅçźÏ¼ù, Åĸ¶ÂçÍ´, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤òÍѤ¤¤¿¥Õ¥ì¥­¥·¥Ö¥ë¤Ê¥ï¥¤¥É¥®¥ã¥Ã¥×»À²½ÊªÈ¾Æ³ÂΤΥ¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè67²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2020/3.
83. ³áÅÄÍ¥µ¤, À¾Ãæ¹ÀÇ·, Åĸ¶ÂçÍ´, ¿·ÅÄͪÂÁ, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Â-Ga2O3(-201)´ðÈľå¤Ø¤Î¦Å-Ga2O3ÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè67²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2020/3.
84. ÅçźÏ¼ù, À¾Ãæ¹ÀÇ·, Åĸ¶ÂçÍ´, ¿·ÅÄͪÂÁ, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë½à°ÂÄêÁêrh-ITOÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¤Èɾ²Á¡×¡¡Âè67²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2020/3.
85. Æ£¸¶Íª´õ, Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢ÌîÅļÂ, ¡Ö¥ß¥¹¥È CVD Ë¡¤Ë¤è¤ë HfxZr1-xO2ÇöËì¤ÎºîÀ½¤È¤½¤ÎÅŵ¤ÅªÆÃÀ­¡×¡¡Âè67²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2020/3.
86. ËÙ¹¾ÎµÅÍ, Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Ã-(AlxGa1-x)2O3º®¾½ÇöËìÀ®Ä¹¡×¡¡Âè67²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2020/3.
87. ÅÏîµ ·¼Í¤, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖÍ­³²¸µÁǥե꡼¤Îȯ¸÷ºàÎÁCs3Cu2I5µÚ¤ÓCsCu2I3¤ÎÀ®Ëì¤È·ë¾½À®Ä¹¡×¡¡Âè67²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2020/3.
88. À¾Ãæ¹ÀÇ·, ¡Ö¥ß¥¹¥È¤òÍѤ¤¤¿ºàÎÁ·ÁÀ®µ»½Ñ¡×¡¡ºÇÀèüµ»½Ñ¤Ç¤â¤Î¤ò´Ñ¤ë(»Ô̱¹ÖºÂ¡¡Àèüµ»½Ñ¹ÖºÂ¡Ë, Åìµþ, 2019/12.
89. ¿·ÅÄ ÍªÂÁ, À¾Ãæ¹ÀÇ·, Åĸ¶ÂçÍ´, µÈËܾ»¹­¡¢¡Ö¶Ê¤²¤é¤ì¤ë½à°ÂÄêGa2O3ÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡±þÍÑʪÍý³Ø²ñ´ØÀ¾»ÙÉô¡¡2019ǯÅÙ¡¡Âè2²ó¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ´ØÀ¾»ÙÉô, Âçºå, 2019/11.
90. D. Tahara, H. Nishinaka, Y. Arata, S. Hasegawa, and M. Yoshimoto, " Bismuth-assisted effect for the growth of ¦Å-Ga2O3 films grown on c-plane sapphire substrates by mist chemical vapor deposition " The 38th Electronic Materials Symposium, ÆàÎÉ, 2019/10.
91. ±Ê²¬Ã£»Ê, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤òÍѤ¤¤¿¦Â-Ga2O3¥Û¥â¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¤ÈZn¥É¡¼¥Ô¥ó¥°¡×¡¡Âè80²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Ë̳¤Æ», 2019.9.
92. ÅçźÏ¼ù, À¾Ãæ¹ÀÇ·, Åĸ¶ÂçÍ´, ¿·ÅÄ ÍªÂÁ, µÈËܾ»¹­¡¢¡ÖLiNbO3,LiTaO3´ðÈľå¤Î¦Á, ¦Å-Ga2O3ÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè80²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Ë̳¤Æ», 2019/9.
93. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, ¿·ÅÄͪÂÁ, ĹëÀî¾­, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëGa2O3ÇöËìÀ®Ä¹¤Ë¤ª¤±¤ë¥Ó¥¹¥Þ¥¹Åº²Ã¤Î¸ú²Ì¡×¡¡Âè80²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Ë̳¤Æ», 2019/9.
94. ĹëÀî¾­, ¾¾Â¼½ßÂÀ, ³Ù»³¶³Ê¿, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖµÛ¼ý¤ª¤è¤Óȯ¸÷ÆÃÀ­¤Ë¤è¤ëGaAsBi¥Æ¥¤¥ë½à°Ì¤Îɾ²Á¤ÈÀ®Ä¹²¹Å٤αƶÁ¡×¡¡Âè80²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Ë̳¤Æ», 2019/9.
95. ¹ñ¶¶Í×»Ê, ÅÄÃæÍ´Êå, âÃÅļ£¼ù, ¹¥ÅÄÀ¿, ¿·ÅÄ ½ßºî, ĹëÀî¾­, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¸åÆ£½¨¼ù¡ÖGaAsBiÇöËìÃæ¤ÎÅŻҤˤª¤±¤ëKerr²óž¥¹¥Ú¥¯¥È¥í¥¹¥³¥Ô¡¼¡×¡¡Âè80²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Ë̳¤Æ», 2019/9.
    °Ëƣͺʹ, Åĸ¶ÂçÍ´, ¿·ÅÄ ÍªÂÁ, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖGaN¥Æ¥ó¥×¥ì¡¼¥È´ðÈľå¤Î¼«Á³»À²½Ëì½èÍý¤¬µÚ¤Ü¤¹¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Å-Ga2O3ÇöËìÀ®Ä¹¤Ø¤Î±Æ¶Á¡×¡¡Âè80²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Ë̳¤Æ», 2019/9.
96. ¿·ÅÄ ÍªÂÁ, À¾Ãæ¹ÀÇ·, Åĸ¶ÂçÍ´, ÅçźÏ¼ù, °Ëƣͺʹ, µÈËܾ»¹­¡¢¡Ö¹çÀ®±ÀÊì¾å¤Ø¤Î¥Ð¥Ã¥Õ¥¡ÁؤÎÁÞÆþ¤Ë¤è¤ë¶Ê¤²¤é¤ì¤ë¦Á-Ga2O3ÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè80²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Ë̳¤Æ», 2019/9.
97. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, ÌîÅļÂ, º´Æ£æÆÂÀ, À¼ÉÒ¹¬,¡¡µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ën+-Si(100)´ðÈľå¤Ø¤Î½à°ÂÄêÁ궯ͶÅÅÂÎ HfO2ÇöËì¤ÎºîÀ½¡×¡¡Âè36²ó¶¯Í¶ÅÅÂαþÍѲñµÄ, µþÅÔ, 2019/5.
98. À¾Ãæ¹ÀÇ·, Åĸ¶ÂçÍ´, ¿·ÅÄ ÍªÂÁ, ÅçźÏ¼ù, ÌîÅļÂ,¡¡µÈËܾ»¹­¡¢¡Ö¿·¤·¤¤¶¯Í¶ÅÅÂΦÅ-Ga2O3¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹µ»½Ñ¡×¡¡Âè36²ó¶¯Í¶ÅÅÂαþÍѲñµÄ, µþÅÔ, 2019/5.
99. ÅçźÏ¼ù, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¦Á-Fe2O3¥Ð¥Ã¥Õ¥¡¡¼ÁؤòÍѤ¤¤¿rÌ̦Á-Al2O3´ðÈľå¤Î½à°ÂÄêÁêrh-ITO¥¨¥Ô¥¿¥­¥·¥ã¥ëÇöËì¤ÎÀ®Ä¹¤Èɾ²Á¡×¡¡Âè66²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ²¬»³, 2019/3.
100. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, ¿·ÅÄ ÍªÂÁ, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Á-(InxAl1-x)2O3¤Îº®¾½ÇöËì¤Î·ë¾½À®Ä¹¡×¡¡Âè66²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ²¬»³, 2019/3.
101. ¿·ÅÄ ÍªÂÁ, Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤òÍѤ¤¤¿van der Waals epitaxy¤Ë¤è¤ë¥Õ¥ì¥­¥·¥Ö¥ë¤Ê¦Å-Ga2O3ÇöËì¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×¡¡Âè66²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ²¬»³, 2019/3.
102. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, ÌîÅļÂ,¡¡º´Æ£æÆÂÀ, À¼ÉÒ¹¬, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ën+-Si(100)´ðÈľå¤Ø¤Î¶¯Í¶ÅÅÂÎHfO2ÇöËì¤ÎºîÀ½¤È¤½¤ÎÅŵ¤ÆÃÀ­É¾²Á¡×¡¡Âè66²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ²¬»³, 2019/3.
103. ÅçźÏ¼ù, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢" Characterization of single-phase metastable rhombohedral indium tin oxide on r-plane ¦Á-Al2O3 substrate with ¦Á-Fe2O3 buffer layers " MRS-J Advanced Functional Oxide Materials, Ê¡²¬, 2018/12.
104. ¿·ÅÄ ÍªÂÁ, À¾Ãæ¹ÀÇ·, Åĸ¶ ÂçÍ´, µÈËܾ»¹­¡¢" Effect of NiO buffer layers on epitaxial growth of ¦Å-Ga2O3 thin films on c-plane sapphire " MRS-J Advanced Functional Oxide Materials, Ê¡²¬, 2018/12.
105. D. Tahara, H. Nishinaka¡¤Y. Arata, and M. Yoshimoto, " Growth and characterization of ¦Å-Ga2O3 films grown on (100) TiO2 substrates by mist chemical vapor deposition " The 37th Electronic Materials Symposium, ¼¢²ì, 2018/10.
106. Y. Arata, H. Nishinaka¡¤D. Tahara, S. Morimoto, and M. Yoshimoto, " Heteroepitaxial growth of single-phase ¦Å-Ga2O3 thin films on c-plane sapphire by insertion of NiO buffer layers" The 37th Electronic Materials Symposium, ¼¢²ì, 2018/10.
107. ¿·ÅÄ ÍªÂÁ, À¾Ãæ¹ÀÇ·, Åĸ¶ ÂçÍ´, ¿¹ËÜ ¾°ÂÀ, µÈËܾ»¹­¡¢¡ÖNiO¥Ð¥Ã¥Õ¥¡ÁؤòÍѤ¤¤¿cÌÌ¥µ¥Õ¥¡¥¤¥¢´ðÈľå¤Ø¤Î¦Å-Ga2O3ÇöËì¤ÎñÁêÀ®Ä¹¡×¡¡ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÊ¿À®30ǯÅÙÂè1²ó¸¦µæ²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, ÆàÎÉ, 2018/7.
108. ĹëÀî ¾­, ³Ù»³ ¶³Ê¿, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖPEDOT:PSS/GaAsBiÂÀÍÛÅÅÃÓ¤ÎÀ½ºî¤Èɾ²Á¡×¡¡ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÊ¿À®30ǯÅÙÂè1²ó¸¦µæ²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, ÆàÎÉ, 2018/7.
109. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, ÌîÅļÂ, µÈËܾ»¹­¡¢¡ÖĶ¥ï¥¤¥É¥Ð¥ó¥É¥®¥ã¥Ã¥×HEMT±þÍѤ˸þ¤±¤¿¦Å-Ga2O3ÇöËì¤Î·ë¾½À®Ä¹¤ÈÅŵ¤ÅªÆÃÀ­É¾²Á¡×¡¡±þÍÑʪÍý³Ø²ñ´ØÀ¾»ÙÉôÊ¿À®30ǯÅÙÂè1²ó¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ´ØÀ¾»ÙÉô, ʼ¸Ë, 2018/5.
110. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, ¿¹ËÜ ¾°ÂÀ, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëAlN¥Æ¥ó¥×¥ì¡¼¥È´ðÈľå¦Å-(AlxGa1-x)2O3¤Î·ë¾½À®Ä¹¡×¡¡Âè65²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2018/3.
111. ¿·ÅÄ ÍªÂÁ, Åĸ¶ ÂçÍ´, ¿¹ËÜ ¾°ÂÀ, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëcÌÌ¥µ¥Õ¥¡¥¤¥¢´ðÈľå¤Ø¤Î¦Å-Ga2O3ÇöËìÀ®Ä¹¤Ë¤ª¤±¤ëNiO¥Ð¥Ã¥Õ¥¡Áؤθú²Ì¡×¡¡Âè65²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2018/3.
112. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, ÌîÅļÂ, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Å-Ga2O3ÇöËì¤Î·ë¾½À®Ä¹¤È¤½¤ÎÅŵ¤ÅªÆÃÀ­É¾²Á¡×¡¡Âè65²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2018/3.
113. ¿¹ËÜ ¾°ÂÀ, ¶ð°æ ¹¨´ð, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖF¥É¡¼¥×¤Ë¤è¤ë¦Á-Ga2O3ÇöËì¤ÎÄãÄñ¹³²½¡×¡¡Âè65²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2018/3.
114. µÜÆâ ¿®±§, Ãæ¼ ¾»¹¬, ¾®ÎÓ µ®Ç·, À¾Ãæ¹ÀÇ·, Åĸ¶ ÂçÍ´, ¿¹ËÜ ¾°ÂÀ, ËÜ»³ ¿µ°ì, µÈËܾ»¹­¡¢¡ÖGaN¥Æ¥ó¥×¥ì¡¼¥È¾å¦Å-Ga2O3ÇöËì¤Î¥É¥é¥¤¥¨¥Ã¥Á¥ó¥°¡×¡¡Âè65²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2018/3.
115. ±ü¼ÂÀ°ì, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVD Ë¡¤Ë¤è¤ë¥Õ¥ÃÁÇź²ÃSnO2 ¤Îñ·ë¾½ÇöËìÀ®Ä¹¡×¡¡Âè65²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2018/3.
116. Pallavi Patil, Fumitaro Ishikawa, Satoshi Shimomura, Hiroyuki Nishinaka, and Masahiro Yoshimoto, ¡É MBE growth of GaAsBi/GaAs on (100) and (411) GaAs Substrates¡É¡¡Âè65²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2018/3.
117. ĹëÀî ¾­, ³Ù»³ ¶³Ê¿, ÎëÌÚ ¹Ìºî, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖPEDOT:PSS/GaAs1-xBixÍ­µ¡Ìµµ¡¥Ï¥¤¥Ö¥ê¥Ã¥ÉÂÀÍÛÅÅÃÓ¤ÎÀ½ºî¡×¡¡Âè65²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2018/3.
118. ±ü¼ÂÀ°ì, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖcÌÌ¥µ¥Õ¥¡¥¤¥¢´ðÈľå¤Ë¤ª¤±¤ë¥Õ¥ÃÁÇź²ÃSnO2¤Îñ·ë¾½À®Ä¹¡× ±þÍÑʪÍý³Ø²ñ´ØÀ¾»ÙÉôÊ¿À®£²£¹Ç¯ÅÙÂ裳²ó¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ´ØÀ¾»ÙÉô, Âçºå, 2018/2.
119. ¿¹Ëܾ°ÂÀ, Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖGaN¥Æ¥ó¥×¥ì¡¼¥ÈɽÌ̤¬¦Å-Ga2O3ÇöËì¤ËµÚ¤Ü¤¹±Æ¶Á¡× ±þÍÑʪÍý³Ø²ñ´ØÀ¾»ÙÉôÊ¿À®£²£¹Ç¯ÅÙÂ裳²ó¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ´ØÀ¾»ÙÉô, Âçºå, 2018/2.
120. T. Okumura, H. Nishinaka¡¤and M. Yoshimoto, " Epitaxial growth of SnO2 layers on c-plane sapphire by mist CVD" The 36th Electronic Materials Symposium, ¼¢²ì, 2017/11.
121. N. Miyauchi, D. Taraha, S. Morimoto, H. Nishinaka¡¤and M. Yoshimoto, " Alloying of ¦Å-In2xGa2-2xO3 epitaxial thin films grown on AlN templates by mist-CVD" The 36th Electronic Materials Symposium, ¼¢²ì, 2017/11.
122. D. Tahara, H. Nishinaka, S. Morimoto, N. Miyauchi, and M. Yoshimoto, " Epitaxial growth of ¦Å-Al2xGa2-2xO3 alloy films on c-plane AlN templates by mist chemical vapor deposition" The 36th Electronic Materials Symposium, ¼¢²ì, 2017/11.
123. S. Morimoto, D. Taraha, N. Miyauchi, H. Nishinaka, and M. Yoshimoto, " The epitaxial growth of ¦Å-Ga2O3 thin films by mist chemical vapor deposition using the GaCl3 precursor solutions" The 36th Electronic Materials Symposium, ¼¢²ì, 2017/11.
124. K. Kakuyama, K. Suzuki, S. Hasegawa, H. Nishinaka, and M. Yoshimoto, "Characterizing tail states of GaAsBi photodiodes by threir spectral response" The 36th Electronic Materials Symposium, ¼¢²ì, 2017/11.
125. µÜÆâ ¿®±§, Åĸ¶ ÂçÍ´, ¿¹ËÜ ¾°ÂÀ, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Å-In2xGa2-2xO3º®¾½ÇöËì¤ÎÀ®Ä¹¡× Âè78²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Ê¡²¬, 2017/9.
126. ¿¹ËÜ ¾°ÂÀ, Åĸ¶ ÂçÍ´, µÜÆâ ¿®±§, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë±ö²½Êª¸¶ÎÁ¤òÍѤ¤¤¿GaN¥Æ¥ó¥×¥ì¡¼¥È¾å¤Ø¤Î¦Å-Ga2O3ÇöËìÀ®Ä¹¡× Âè78²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Ê¡²¬, 2017/9.
127. ³Ù»³¶³Ê¿, ÎëÌڹ̺î, ĹëÀî¾­, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖGaAs1-xBix ¥Õ¥©¥È¥À¥¤¥ª¡¼¥É¤Îʬ¸÷´¶ÅÙÆÃÀ­¡× Âè78²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Ê¡²¬, 2017.9.
128. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, ¿¹Ëܾ°ÂÀ, µÜÆâ¿®±§, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëAlN¥Æ¥ó¥×¥ì¡¼¥È´ðÈľå¦Å-Ga2xGa2-2xO3¤Î·ë¾½À®Ä¹¡× Âè12²óÆüËÜ¥»¥é¥ß¥Ã¥¯¥¹¶¨²ñ´ØÀ¾»ÙÉô¡¡³Ø½Ñ¹Ö±é²ñ, µþÅÔ, 2017/7.
129. D. Tahara, H. Nishinaka, S. Morimoto, and M. Yoshimoto, "Heteroepitaxial growth of ¦Å-Ga2O3 thin films on cubic (111) GGG substrates by mist chemical vapor deposition" IEEE¡¡The 2017 International Meeting for Future of Electron Devices, Kansai, µþÅÔ, 2017/6.
130. ³Ù»³¶³Ê¿, ÎëÌڹ̺î, ĹëÀî¾­, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡ÖGaAsBi ¥Õ¥©¥È¥À¥¤¥ª¡¼¥É¤Îʬ¸÷´¶ÅÙÆÃÀ­¡× Ê¿À®29ǯÅÙÂè2²óȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÂè1²ó¸¦µæ²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, ϲλ³, 2017/7.
131. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Å-Ga2O3À®Ä¹¤Î¥¹¥È¥¤¥­¥ª¥á¥È¥ê¡¼À©¸æ¡× Âè64²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¿ÀÆàÀî, 2017/3.
132. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Å-Ga2O3¤Î¥¹¥È¥¤¥­¥ª¥á¥È¥ê¡¼À©¸æ¡× Ê¿À®28ǯÅÙȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÂè1²ó¹Ö±é²ñ¡¦¸«³Ø²ñ¹Ö±é¥×¥í¥°¥é¥à, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, Ä»¼è, 2017/1.
133. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹ÍÑÅӤ˸þ¤±¤¿¦Å-Ga2O3·ë¾½À®Ä¹µ»½Ñ¡× ¹âÃι©²ÊÂç³Ø¥Ê¥Î¥Æ¥¯¸¦¥·¥ó¥Ý¥¸¥¦¥à2016, ¹âÃÎ, 2016/11.
134. Åĸ¶ÂçÍ´, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëÏ»Êý¾½´ðÈľå¦Å-Ga2O3¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡× ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÊ¿À®28ǯÅÙÂè2²ó¸¦µæ²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, µþÅÔ, 2016/11.
135. À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ë¦Å-Ga2O3¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡× Âè77²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¿·³ã 2016/9
136. ¼ÇÅÄͪ¾­, ÍèÇϱѼù, µÈ²¬ÎÊ, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¹â´ÞͭΨGaAs1-xBix¤ÎÆðۤÊPLÆÃÀ­¡× Âè77²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, ¿·³ã, 2016/9.
137. H. Nishinaka, and M. Yoshimoto, "Solution based mist-CVD technique for hybrid organic-inorganic perovskite" Âè35²óÅŻҺàÎÁ¥·¥ó¥Ý¥¸¥¦¥à¡¢¼¢²ì¡¡2016/6
138. ÍèÇϱѼù, ÅßÌÚÂö¿¿, µÈ²¬ÎÊ, ¼ÇÅÄͪ¾­, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ì¡¼¥¶¡¼È¯¿¶¤ò¼¨¤¹È¾¶â°ȾƳÂκ®¾½GaAs1-xBix¤Îȯ¸÷ÆÃÀ­¡×, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌçÊ¿À®27ǯÅÙÂè1²ó¹Ö±é²ñ¡¦¸«³Ø²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, Ê¡°æ,¡¡2016/1.
139. À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥È¤òÍѤ¤¤¿Í­µ¡Ìµµ¡¥Ú¥í¥Ö¥¹¥«¥¤¥ÈºàÎÁ¤Î·ÁÀ®µ»½Ñ¡×, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌçÊ¿À®27ǯÅÙÂè1²ó¹Ö±é²ñ¡¦¸«³Ø²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, Ê¡°æ,¡¡2016/1.
140. À¾Ãæ¹ÀÇ·, µÈËܾ»¹­,¡Ö¥ß¥¹¥ÈCVDË¡¤Ë¤è¤ëÉ©ÌÌÂξ½ITO¤Î¥Ø¥Æ¥í¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×, Âè63²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ, Åìµþ, 2016/3.
141. ÍèÇϱѼù, ÅßÌÚÂö¿¿, µÈ²¬ÎÊ, ¼ÇÅÄͪ¾­, À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ì¡¼¥¶¡¼È¯¿¶¤ò¼¨¤¹È¾¶â°ȾƳÂκ®¾½GaAs1-xBix¤Îȯ¸÷ÆÃÀ­¡×, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌçÊ¿À®27ǯÅÙÂè1²ó¹Ö±é²ñ¡¦¸«³Ø²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, Ê¡°æ,¡¡2016/1
142. À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¥ß¥¹¥È¤òÍѤ¤¤¿Í­µ¡Ìµµ¡¥Ú¥í¥Ö¥¹¥«¥¤¥ÈºàÎÁ¤Î·ÁÀ®µ»½Ñ¡×, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌçÊ¿À®27ǯÅÙÂè1²ó¹Ö±é²ñ¡¦¸«³Ø²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, Ê¡°æ, , 2016/1.
143. À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö¸Å¤¯¤Æ¿·¤·¤¤½à°ÂÄêÁêrh-ITO¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç°Ñ°÷²ñÊ¿À®27ǯÅÙÂè2²ó¸¦µæ²ñ, ÆüËܺàÎÁ³Ø²ñȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ÉôÌç, µþÅÔ, 2015/11
144. H. Nishinaka, M. Oda, and M. Yoshimoto, " Metastable rh-ITO epitaxial films by Mist-CVD method for GaN devices" Âè34²óÅŻҺàÎÁ¥·¥ó¥Ý¥¸¥¦¥à, ¼¢²ì,¡¡2015/7.
145. À¾Ãæ¹ÀÇ·, µÈËܾ»¹­¡¢¡Ö½à°ÂÄêÁê¤Îrh-ITO¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¡×, ±þÍÑʪÍý³Ø²ñ´ØÀ¾»ÙÉôÊ¿À®£²£·Ç¯ÅÙÂ裱²ó¹Ö±é²ñ, ±þÍÑʪÍý³Ø²ñ´ØÀ¾»ÙÉô, ʼ¸Ë,¡¡2015/6.
146. ÌÚ²¼ ÇîÇ·¡¢¼·¼ï ¹¨¼ù¡¢ÃÓÅÄ ½áÌé¡¢ÅÔÃÞ °ìÉס¢µÈËÜ ¾»¹­¡¢¡ÖSiC¤ÎÀö¾ôµ»½Ñ¤Ë¤Ä¤¤¤Æ¡Ê¾·ÂÔ¹Ö±é¡Ë¡×Â裷£¶²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ¡¡13p-1B-4
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150. µ²¬Âçµ±¡¢ÍèÇϱѼù¡¢µÈËܾ»¹­¡¢Pablo Vaccaro¡¢Isabel Alonso¡¢Miquel Garriga¡¢Alejandro Goni¡¢¡Ö°ú¤ÃÄ¥¤êÏÄÉÕÍ¿¤Î¤¿¤á¤ÎGe¥Ö¥ê¥Ã¥¸¹½Â¤¤ÎÀ½ºî¤Èɾ²Á¡×Â裷£µ²ó±þÍÑʪÍý³Ø²ñ½©µ¨³Ø½Ñ¹Ö±é²ñ¡¡2014.9
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195. ÉٱʰÍΤ»Ò¡¤Èø¹¾Ë®½Å¡¤µÈËܾ»¹­:¡ÖStructural investigation of GaAs1-xBix/GaAs multiquantum well structures fabricated by molecular beam epitaxy¡×¡¤Âè28 ²óÅŻҺàÎÁ¥·¥ó¥Ý¥¸¥¦¥à¡¤¼é»³»Ô¡¤2009ǯ7·î
196. À¶¿å½¨Íº¡¤¼Ä¸¶¹­¡¤ÌÚ²¼ÇîÇ·¡¤µÈËܾ»¹­:¡ÖReduction of self-heating effect in silicon MOSFETs on directly bonded Si-on-SiC wafer with high heat conductance¡×¡¤Âè28 ²óÅŻҺàÎÁ¥·¥ó¥Ý¥¸¥¦¥à¡¤¼é»³»Ô¡¤2009ǯ7·î
197. »³ÅÄÏÂÌÉٱʰÍΤ»Ò¡¤Èø¹¾Ë®½Å¡¤µÈËܾ»¹­:¡Ö(100)GaAs´ðÈľåIn1-yGayAs1-xBix/GaAs¿½ÅÎ̻Ұæ¸Í¹½Â¤¤ÎÀ½ºî¡×¡¤Âè56²ó±þÍÑʪÍý´Ø·¸Ï¢¹ç¹Ö±é²ñ¡¤¤Ä¤¯¤Ð»Ô¡¤2009ǯ3·î
198. ¼Ä¸¶¹­¡¤Ì˿͡¤ÌÚ²¼ÇîÇ·¡¤µÈËܾ»¹­:¡ÖSi-on-SiC´ðÈľåMOSFET¤ÎÊüÇ®¸ú²Ì¤Î¼Â¾Ú¡×¡¤Âè56²ó±þÍÑʪÍý´Ø·¸Ï¢¹ç¹Ö±é²ñ¡¤¤Ä¤¯¤Ð»Ô¡¤2009ǯ3·î
199. ¹âÅç¼þÊ¿¡¤µÈËܾ»¹­¡¤Woo Sik Yoo:¡Ö¥Û¥È¥ë¥ß¥Í¥»¥ó¥¹Â¬Äê¤Ë¤è¤ë¥·¥ê¥³¥ó¶ËÀõÀܹç¤ÎÈóÇ˲õÈóÀÜ¿¨É¾²Á(2)¡×¡¤Âè56²ó±þÍÑʪÍý´Ø·¸Ï¢¹ç¹Ö±é²ñ¡¤¤Ä¤¯¤Ð»Ô¡¤2009ǯ3·î
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205. ÉٱʰÍΤ»Ò¡¤ÌÚ²¼Íº²ð¡¤Èø¹¾Ë®½Å¡¤µÈËܾ»¹­¡§¡ÖFabrication of GaAsBi/GaAs multi-Quantum well structures with 1.3¦Ìm¡×¡¤Âè27²óÅŻҺàÎÁ¥·¥ó¥Ý¥¸¥¦¥à¡¤°ËƦ»Ô¡¤2008ǯ7·î
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208. ÉٱʰÍΤ»Ò¡¤Èø¹¾Ë®½Å¡¤µÈËܾ»¹­¡§¡Ö1.3¦Ìm¤Ç¤Î¥Û¥È¥ë¥ß¥Í¥»¥ó¥¹È¯¸÷¤òÍ­¤¹¤ëGaAsBi/GaAs¿½ÅÎ̻Ұæ¸Í¹½Â¤¤ÎÀ½ºî¡×¡¤Âè55²ó³Ø½Ñ¹Ö±é²ñ¡¤ÀéÍÕ¸©Á¥¶¶»Ô¡¤2008ǯ3·î
209. ÌÚ²¼Íº²ð¡¤ÉٱʰÍΤ»Ò¡¤Èø¹¾Ë®½Å¡¤µÈËܾ»¹­¡§¡Öʬ»ÒÀþ¥¨¥Ô¥¿¥­¥·¡¼Ë¡¤Ë¤è¤ëGaAsBi/GaAs ¿½ÅÎ̻Ұæ¸Í¹½Â¤¤ÎÀ½ºî¡×¡¤ÅŻҾðÊóÄÌ¿®³Ø²ñ¥ì¡¼¥¶Î̻ҥ¨¥ì¥¯¥È¥í¥Ë¥¯¥¹¸¦µæ²ñ¡¤¿²²°Àî»Ô¡¤2008ǯ1·î
210. ¼Ä¸¶¹­¡¤µÈËܾ»¹­¡§¡Ö¥·¥ê¥³¥ó¥«¡¼¥Ð¥¤¥É¤òÍѤ¤¤¿SOI´ðÈľå¤Ø¤Î¥·¥ê¥³¥óMOSFET¤ÎÀ½ºî¡×¡¤Âè68²ó±þÍÑʪÍý³Ø²ñ³Ø½Ñ¹Ö±é²ñ¡¤»¥ËÚ»Ô¡¤2007ǯ9·î
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