国際会議（2000年以降） - Yoshimoto Laboratory

2000年～2006年 †

M. Yoshimoto, G. Feng:"MBE Growth of InMnN and its annealing characteristics",3rd International Indium Nitride Workshop,Ilhabela Island, Brasil, November 2006
T. Sasaki, S. Nishibe, H. Harima, T. Isshiki, M. Yoshimoto, K. Kisoda, T. Fukada, W. S. Yoo:"Raman study of low-temperature formation of nickel silicide layers",14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2006, Kyoto City, October 2006
T. Isshiki, K. Nishio, T. Sasaki, H. Harima, M. Yoshimoto, T. Fukada, W. S. Yoo:"High-Resolution Transmission Electron Microscopy of Interfaces between Thin Nickel Layers on Si(001) after Nickel Silicide Formation under Various Annealing Conditions",14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2006, Kyoto City, October 2006
M. Yoshimoto, H. Nishigaki, H. Harima, T. Isshiki, K. Kang, W. S. Yoo:"Non-contact, Non-destructive Crystal Quality Characterization of Ultra-shallow Ion Implanted Silicon",14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2006, Kyoto City, October 2006
G. Feng, K. Oe, M. Yoshimoto:"Temperature dependence of Bi behaviors in MBE growth of InGaAs",14th International Conference on Molecular Beam Epitaxy (MBE2006), Tokyo, September 2006
M. Yoshimoto, W. Huang, G. Feng, Y. Tanaka, K. Oe:"Molecular Beam Epitaxy of GaNAsBi? Layer for Temperature-Insentive Wavelength",14th International Conference on Molecular Beam Epitaxy (MBE2006), Tokyo, September 2006
K. Oe, Y. Tanaka, W. Huang, G. Feng, K. Yamashita, M. Yoshimoto, Y. Kondo, S. Tsuji:"Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi?/GaAs DH Diodes",32nd European Conference on Optical Communication,Cannes, France, September 2006
K. Oe, Y. Tanaka, W. Huang, G. Feng, K. Yamashita, M. Yoshimoto, Y. Kondo:"Temperature-Insensitive Wavelength Electroluminescent Emission from GaNAsBi? GaAs DH Diodes",Northern Optics 2006,Bergen, Norway, June 2006
M. Yoshimoto, H. Nishigaki, H. Harima, T. Isshiki, K. Kang, W. S. Yoo:"Characterization of Ultra-Shallow Boron-Implanted Layer on Silicon Using Ultraviolet Raman Spectroscopy",2006 International Meeting for Future of Electron Devices, Kansai（IMFEDK2006), Kyoto City, April 2006
G. Feng, K. Oe, M. Yoshimoto:"Bismuth containing III-V quaternary alloy InGaAsBi grown by MBE",15th International Conference on Ternary and Multinary Compounds, Kyoto City, March 2006
M. Yoshimoto, W. Huang, G. Feng, K. Oe: "GaNAsBi? Semiconductor Alloy with Temperature-Insensitive Bandgap", Materials Reseach Society 2005 Fall Meeting, Boston, USA, December 2005
T. Maeda, Y. Nakamura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Furusho, H. Kinoshita, M. Yoshimoto: "High-Speed and High-Quality Epitaxial Growth of 6H-SiC by Closed Sublimation Method", Materials Reseach Society 2005 Fall Meeting, Boston, USA, December 2005
K. Taguchi, M. Yamashita, M. Yamazaki, A. Chayahara, Y. Horino, T. Iwade, M. Yoshimoto: "Radical Beam Deposition of Silicon Nitride towards Passivation for Organic Devices", 2005 Materials Research Society Fall Meeting, Symposium D: Organic and Nanostructured Composite Photovoltaics and Solid-State Lighting, Boston, USA, November 2005
K. Oe, M. Yoshimoto, G. Feng: "GaNyAs1-x-yBix Semiconductor Alloy for Temperature-insensitive-wavelength Lasers in WDM Optical Communication", Annual Meeting IEEE Lasers & Electro-Optics Society (LEOS), Sydney, Australia, October 2005
K. Yamashita, M. Yoshimoto, K. Oe: "Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication", 32nd International Symposium on Compound Semiconductors, Rust, Germany, September 2005
Y. Kawai, T. Maeda, Y. Nakamura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimto, T. Furusyo, H. Kinoshita, H. Shiomi: "6H-SiC Homoepitaxial Growth and Optical Property of Boron-and Nitrogen-Doped Donor Accepter Pair (DAP) States on 1degree-Off Substrate by Closed-Space", International Conference on Silicon Carbide and Related Materials 2005, Pittsburgh, USA, September 2005
M. Yoshimoto, W. Huang, G. Feng, K. Oe: "New semiconductor alloy GaNAsBi? with temperature-insensitive bandgap", 6th International Conference on Nitride Semiconductors, Bremen, Germany, August 2005
M. Yoshimoto, H. Nishigaki, H. Harima, K. Kang, W. S. Yoo: "Ultraviolet raman spectroscopic study on flash-anneal recrstallization of ultra-shallow boron-implantated layer on silicon", 207th Electrochemical Society Meeting, Quebec City, Canada, May 2005
G. Feng, S. Yukumoto, M. Yoshimoto: "Mn doped InN grown by molecular beam epitaxy", 2005 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, April 2005
M. Yoshimoto, W. Huang, J. Saraie, K.Oe: "MBE-grown GaNAsBi? matched to GaAs with 1.3-μm emission wavelength", Materials Reseach Society 2004 Fall Meeting, Boston, USA, November 2004
Y. Takehara, W. Huang, J. Saraie, K. Oe, M.Yoshimoto: "Low temeprature growth of GaNAs toward creation of GaNAsBi?", 2004 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, July 2004
W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, A. Chayahara, Y. Horino, K. Oe: "Molecular Beam of Quaternary Semiconductor Alloy GaNAsBi?", 16th International Conference Indium Phosphide and Related Materials（IPRM16), Kagoshima, May 2004
M. Yoshimoto, W. Huang, Y. Takehara, A. Chayahara, J. Saraie, K. Oe: "New semiconductor GaNAsBi? alloy grown by molecular beam epitaxy", Materials Reseach Society 2004 Spring Meeting, San Francisco, USA, April 2004
K. Oe, M. Yoshimoto: "GaAsBi semiconductor alloy towards temperature-insensitive wavelength laser diodes", 12th Int. Workshop Phys. Semicond. Dev. (IWPSD 2003), Chennai, India, December 2003
M. Yoshimoto: "Sub-m scale photoluminescence images of wide bandgap semiconductors by cryogenic scanning optical microscope", 日韓先端技術交流セミナー, 韓国水原市　三星総合技術院, August 2003
M. Yoshimoto, S. Murata, J. Saraie, K. Oe, A.Chayahara: "Growth of metastable GaAsBi alloy by molecular beam epitaxy", 45th Electronic Materials Conference, Salt Lake City, USA, June 2003
M. Yoshimoto, Y. Yamamoto, J. Saraie: "Fabrication of InN/Si heterojunction with rectifying characteristics", 5th International Conference on . Nitride Semiconductors（ICNS-5), Nara, May 2003
M. Yoshimoto, Y. Yamamoto, H. Wei, H. Harima, J. Saraie: "Wide bandgap of polycrystalline InN caused by a few percent incorporation of oxygen", 5th International Conference on . Nitride Semiconductors（ICNS-5), Nara, May 2003
E. Kurimoto, H. Harima, H. Wei, M. Yoshimoto, T. Yamaguchi, Y. Saito, Y. Nanishi: "Optical detection of major defects in InN", 5th International Conference on . Nitride Semiconductors（ICNS-5), Nara, May 2003
M. Yoshimoto, "Sub-m scale photoluminescence images of wide bandgap semiconductors by cryogenic scanning optical microscope", 9th international conference on defect-recognition, imaging and physics in semiconductor, Rimini, Italy, September 2001
M. Yoshimoto, J. Saraie, S. Nakamura, "Impurity Incorporation in Epitaxially Laterally Overgrown GaN Detected by Cryogenic Photoluminescence Microscope with Sub-micron Spatial Resolution", The 13th International Conference on Crystal Growth in Conjunction with The 11th International Conference on Vapor Growth and Epitaxy (ICCG13/ICVGE11), Kyoto, July 2001
M. Yoshimoto, J. Saraie, S. Nakamura, "Sub-micron scale photoluminescence images of epitaxially laterally overgrown GaN at a low temperature", 43rd Electronic Materials Conference, Notre Dame, USA, June 2001
M. Yoshimoto, T. Nakano, T. Yamasita, K. Suzuki, J. Saraie: "MBE growth of InN on Si toward hole-barrier structure in Si devices", Int. Workshop on Nitride Semiconductors, 2000（IWN2000), Nagoya, September 2000
M. Yoshimoto, J. Saraie, "Deep sub-μm scale photoluminescence image of wide bandgap mterials by cryogenic scanning microscope", 2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Naha, June 2000