#freeze
**''2000年〜2006年'' [#ld411c94]

+Y. Kawai,  T. Maeda,  Y. Nakamura,  Y. Sakurai, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, H. Kinoshita and H. Shiomi: "6H-SiC homoepitaxial growth and optical property of boron- and nitrogen-doped donor-acceptor pair (DAP) emission on 1degrees-off substrate by closed-space sublimation method", Mater. Sci. Forum, 527-529 (2006) 263-266
+Tomohiko Maeda, Yoshihiro Nakamura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Tomoaki Furusho, Hiroyuki Kinoshita and Masahiro Yoshimoto: "High-Speed and High-Quality Epitaxial Growth of 6H-SiC by Closed Sublimation Method", Mat. Res. Soc. Symp. Proc., 891 (2006) 597-601
+M. Yoshimoto, W. Huang, G. Feng and K. Oe: "GaNAsBi Semiconductor Alloy with Temperature-Insensitive Bandgap", Mat. Res. Soc. Symp. Proc., 891 (2006) pp.B11.6.1-B11.6.6.
+G. Feng, K. Oe and M. Yoshimoto: "Bismuth containing III-V quaternary alloy InGaAsBi grown by MBE", phys. stat. solidi (a), 203 (2006) 2670-2673        
+M. Yoshimoto, H. Nishigaki, H. Harima, T. Isshiki, K. Kitaek, W.S.Yoo: "Application of UV-Raman spectroscopy for characterization of the physical crystal structure following flash anneal of an ultrashallow implanted Layer", J. Electrochemical Soc., 153, (2006) G697-702  
+M. Yoshimoto, W. Huang, G. Feng and M. Yoshimoto: "New semiconductor alloy GaNAsBi with temperature-insensitive bandgap", phys. stat. solidi (b), 243 1421-1425 (2006)
+S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho,, M. Yoshimoto, T. Kimoto, J. Suda, IG Ivanov, JP. Bergman, B. Monemar, T. Onuma and SF. Chichibu: "Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC", J. Appl. Phys. 99 093108 (2006)
+K. Yamashita, M. Yoshimoto, K.Oe: "Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication", phys. stat. solidi (c), 3 (3) 693-696 (2006)
+G. Feng and M. Yoshimoto: "Influence of Mn incorporation on MBE growth of (In,Mn)N", J. Electronic Materials, 35, 319-322 (2006)
+Y. Takehara, M. Yoshimoto, W.Huang, J. Saraie, K.Oe, A. Chayahara、Y.Horino: "Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy", Jpn J. Appl. Phys. 45 (2006) 67-69 
+W. Huang, K. Oe, G. Feng, M. Yoshimoto: "Molecular-beam epitaxy and characteristics of GaN&size(9){y};As&size(9){1-x-y};Bi&size(9){x};", J.Appl. Phys. 98 053505 1-6 (2005) 
+W. Huang, M. Yoshimoto, K. Oe, A. Chayahara, Y.Horino: "New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy" Jpn. J. Appl. Phys., 44 (2005) L1161-L1163  
+M. Yoshimoto, W. Huang, J. Saraie, K.Oe: "MBE-grown GaNAsBi matched to GaAs with 1.3-μm emission wavelength" Mat. Res. Soc. Symp. Proc., 829, 523-528 (2005)
+田口貢士, 吉本昌広, 更家淳司: 「有機液体原料を用いたラジカルビーム堆積法による低炭素濃度シリコン窒化膜の堆積」 材料, 53、1318-1322 (2004)
+K. Taguchi, M. Yoshimoto, J. Saraie: "Dense Structure of SiN&size(9){x}; films fabricated by radical beam deposition method using hexamethyldisilazane", Jpn. J. Appl. Phys., 43 (2004) L403-L1405
+M. Yoshimoto, W. Huang, Y. Takehara, J. Saraie, K. Oe: "GaN&size(9){y};As&size(9){1-x-y};Bi&size(9){x}; alloy lattice matched to GaAs with 1.3 μm photoluminescence emission", Jpn. J. Appl. Phys., 43 (2004) L1350-L1352
+M. Yoshimoto, W. Huang, Y. Takehara, J. Saraie, A. Chayahara, Y. Horino, K. Oe: "New semiconductor GaNAsBi alloy grown by molecular beam epitaxy", Jpn. J. Appl. Phys., 43 (2004) L845-L847
+W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, A. Chayahara, Y. Horino and, K. Oe: "Molecular Beam of Quaternary Semiconductor Alloy GaNAsBi", Proc. 16th IPRM16, pp.876-881 (2004)
+Kohshi Taguchi, Masahiro Yoshimoto, Junji Saraie: "Reduction of carbon impurity in silicon nitride films deposited from metalorganic source", Jpn. J. Appl. Phys., 43,(2004) L148-L150 
+E. Kurimoto, M. Hangyo, H. Harima, M. Yoshimoto, T. Yamaguchi, T. Araki,  Y. Nanishi, K. Kisoda: "Spectroscopic observation of oxidation process in InN", Appl. Phys. Lett., 84 212-214 (2004)
+Masahiro Yoshimoto, Wei Huang, Kohshi Taguchi, Hiroshi Harima, Junji Saraie: "Improved electrical properties of InN by high-temperature annealing with in situ capped SiN&size(9){x}; layers", Jpn. J. Appl. Phys., 43 (2004) L97-L99
+Kunishige Oe and Masahiro Yoshimoto: "GaAsBi semiconductor alloy towards temperature-insensitive wavelength laser diodes", Proc. 12th Int. Workshop Phys. Semicond. Dev. (IWPSD 2003), Chennai, India, pp.876-881. (2003)
+M. Yoshimoto, Y.Yamamoto,  J. Saraie: "Fabrication of InN/Si heterojunction with rectifying characteristics", phys. stat. soldi C, 0, 2794-2797 (2003)
+Masahiro Yoshimoto, Hiroaki Yamamoto, Wei Huang, Hiroshi Harima, Junji Saraie, Akiyoshi Chayahara, and Yuji Horino: "Widening of  optical bandgap of polycrystalline InN with a few percent incorporation of oxygen", Appl. Phys. Lett., 83 3480-3482 (2003)
+Masahiro Yoshimoto, Satoshi Murata, Akiyoshi Chayahara, Yuji Horino, Junji Saraie, Kunishige Oe: "Metastable GaAsBi alloy grown by molecular beam epitaxy", Jpn. J. Appl. Phys., 42 (2003) L1235-L1237
+吉本昌広: 「サブミクロン解像度極低温顕微ホトルミネセンス装置の開発とワイドギャップ半導体の欠陥検出への応用」, 材料, 51,　989-994 (2002)
+M. Yoshimoto, J. Saraie, S. Nakamura: "Impurity Incorporation in Epitaxially Laterally Overgrown GaN Detected by Cryogenic Photoluminescence Microscope with Sub-micron Spatial Resolution", J. Cryst. Growth, 237-239, 1075-1078 (2002)
+M. Yoshimoto: "Sub-micron Scale Photoluminescence Images of Wide Bandgap Semiconductors by Cryogenic Scanning Optical Microscope", Materials Science and Engineering B, 91-92, 21-24 (2002)
+M. Yoshimoto, M. Itoh, J. Saraie, T. Yasui, S. Ha, T. Kurobe, and H. Matsunami: "GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices", Jpn. J. Appl. Phys., 40 (2001) 3953-3959
+M. Yoshimoto, J. Saraie, S.Nakamura: "Low-Temperature Microscopic Photoluminescence Images of Epitaxially Laterally Overgrown GaN", Jpn. J. Appl. Phys., 40 (2001) L386-L388               
+K. Nakamura, M. Itoh, M. Yoshimoto, J. Saraie, H. Matsunami: "Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy", Jpn. J. Appl. Phys., 40 (2001) 2132-2137 
+K. Nakamura, T. Hashimoto, T. Yasui, M. Yoshimoto, H. Matsunami: "Lattice Distortion in GaAsP Heteroepitaxy Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy", Jpn. J. Appl. Phys., 40 (2001) 1337-1378
+M. Yoshimoto, M. Goto, J. Saraie: "Direct Observation of Polytype Domain in GaN by Cryogenic Scanning Photoluminescence Microscope with Sub-Micron Spatial Resolution", Jpn. J. Appl. Phys., 40 (2001) 3159-3160 
+Masahiro Yoshimoto, Takao Nakano, Takashi Yamasita, Koji Suzuki, Junji Saraie: "MBE Growth of InN on Si toward Hole-Barrier Structure in Si Devices", Proc. Int. Workshop on Nitride Semiconductors,2000, Nagoya(IPAP Conf. Series 1), 186-189 (2000)
+Masahiro Yoshimoto: "Scanning Photoluminescence Microscope with Sub-micorn Resolution and High Optical Throughput at a low Temperature", Jpn. J. Appl. Phys., 39 (2000) 6105-6106
+M. Yoshimoto, M. Goto, J. Saraie, T. Kimoto, H. Matsunami: "Sub-μm scale photoluminescence image of SiC and GaN at a low temperature", Mater. Sci. Forum, 338-342/,627-630 (2000)
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