#freeze
**''2000年〜2006年'' [#pce476db]
+M. Yoshimoto, G. Feng:"MBE Growth of InMnN and its annealing characteristics",3rd International Indium Nitride Workshop,Ilhabela Island, Brasil, November 2006
+T. Sasaki, S. Nishibe, H. Harima, T. Isshiki, M. Yoshimoto, K. Kisoda, T. Fukada, W. S. Yoo:"Raman study of low-temperature formation of nickel silicide layers",14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2006, Kyoto City, October 2006
+T. Isshiki, K. Nishio, T. Sasaki, H. Harima, M. Yoshimoto, T. Fukada, W. S. Yoo:"High-Resolution Transmission Electron Microscopy of Interfaces between Thin Nickel Layers on Si(001) after Nickel Silicide Formation under Various Annealing Conditions",14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2006, Kyoto City, October 2006
+M. Yoshimoto, H. Nishigaki, H. Harima, T. Isshiki, K. Kang, W. S. Yoo:"Non-contact, Non-destructive Crystal Quality Characterization of Ultra-shallow Ion Implanted Silicon",14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2006, Kyoto City, October 2006
+G. Feng, K. Oe, M. Yoshimoto:"Temperature dependence of Bi behaviors in MBE growth of InGaAs",14th International Conference on Molecular Beam Epitaxy (MBE2006), Tokyo, September 2006
+M. Yoshimoto, W. Huang, G. Feng, Y. Tanaka, K. Oe:"Molecular Beam Epitaxy of GaNAsBi Layer for Temperature-Insentive Wavelength",14th International Conference on Molecular Beam Epitaxy (MBE2006), Tokyo, September 2006
+K. Oe, Y. Tanaka, W. Huang, G. Feng, K. Yamashita, M. Yoshimoto, Y. Kondo, S. Tsuji:"Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes",32nd European Conference on Optical Communication,Cannes, France, September 2006
+K. Oe, Y. Tanaka, W. Huang, G. Feng, K. Yamashita, M. Yoshimoto, Y. Kondo:"Temperature-Insensitive Wavelength Electroluminescent Emission from GaNAsBi GaAs DH Diodes",Northern Optics 2006,Bergen, Norway, June 2006
+M. Yoshimoto, H. Nishigaki, H. Harima, T. Isshiki, K. Kang, W. S. Yoo:"Characterization of Ultra-Shallow Boron-Implanted Layer on Silicon Using Ultraviolet Raman Spectroscopy",2006 International Meeting for Future of Electron Devices, Kansai（IMFEDK2006), Kyoto City, April 2006
+G. Feng, K. Oe, M. Yoshimoto:"Bismuth containing III-V quaternary alloy InGaAsBi grown by MBE",15th International Conference on Ternary and Multinary Compounds, Kyoto City, March 2006
+M. Yoshimoto, W. Huang, G. Feng, K. Oe: "GaNAsBi Semiconductor Alloy with Temperature-Insensitive Bandgap", Materials Reseach Society 2005 Fall Meeting, Boston, USA, December 2005
+T. Maeda, Y. Nakamura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Furusho, H. Kinoshita, M. Yoshimoto: "High-Speed and High-Quality Epitaxial Growth of 6H-SiC by Closed Sublimation Method", Materials Reseach Society 2005 Fall Meeting, Boston, USA, December 2005
+K. Taguchi, M. Yamashita, M. Yamazaki, A. Chayahara, Y. Horino, T. Iwade, M. Yoshimoto: "Radical Beam Deposition of Silicon Nitride towards Passivation for Organic Devices", 2005 Materials Research Society Fall Meeting, Symposium D: Organic and Nanostructured Composite Photovoltaics and Solid-State Lighting, Boston, USA, November 2005
+K. Oe, M. Yoshimoto, G. Feng: "GaNyAs1-x-yBix Semiconductor Alloy for Temperature-insensitive-wavelength Lasers in WDM Optical Communication", Annual Meeting IEEE Lasers & Electro-Optics Society (LEOS), Sydney, Australia, October 2005
+K. Yamashita, M. Yoshimoto, K. Oe: "Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication", 32nd International Symposium on Compound Semiconductors, Rust, Germany, September 2005
+Y. Kawai, T. Maeda, Y. Nakamura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimto, T. Furusyo, H. Kinoshita, H. Shiomi: "6H-SiC Homoepitaxial Growth and Optical Property of Boron-and Nitrogen-Doped Donor Accepter Pair (DAP) States on 1degree-Off Substrate by Closed-Space", International Conference on Silicon Carbide and Related Materials 2005, Pittsburgh, USA, September 2005
+M. Yoshimoto, W. Huang, G. Feng, K. Oe: "New semiconductor alloy GaNAsBi with temperature-insensitive bandgap", 6th International Conference on Nitride Semiconductors, Bremen, Germany, August 2005
+M. Yoshimoto, H. Nishigaki, H. Harima, K. Kang, W. S. Yoo: "Ultraviolet raman spectroscopic study on flash-anneal recrstallization of ultra-shallow boron-implantated layer on silicon", 207th Electrochemical Society Meeting, Quebec City, Canada, May 2005
+G. Feng, S. Yukumoto, M. Yoshimoto: "Mn doped InN grown by molecular beam epitaxy", 2005 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, April 2005
+M. Yoshimoto, W. Huang, J. Saraie, K.Oe: "MBE-grown GaNAsBi matched to GaAs with 1.3-μm emission wavelength", Materials Reseach Society 2004 Fall Meeting, Boston, USA, November 2004
+Y. Takehara, W. Huang, J. Saraie, K. Oe, M.Yoshimoto: "Low temeprature growth of GaNAs toward creation of GaNAsBi", 2004 International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, July 2004
+W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, A. Chayahara, Y. Horino, K. Oe: "Molecular Beam of Quaternary Semiconductor Alloy GaNAsBi", 16th International Conference Indium Phosphide and Related Materials（IPRM16), Kagoshima, May 2004
+M. Yoshimoto, W. Huang, Y. Takehara, A. Chayahara, J. Saraie, K. Oe: "New semiconductor GaNAsBi alloy grown by molecular beam epitaxy", Materials Reseach Society 2004 Spring Meeting, San Francisco, USA, April 2004
+K. Oe, M. Yoshimoto: "GaAsBi semiconductor alloy towards temperature-insensitive wavelength laser diodes", 12th Int. Workshop Phys. Semicond. Dev. (IWPSD 2003), Chennai, India, December 2003
+M. Yoshimoto: "Sub-m scale photoluminescence images of wide bandgap semiconductors by cryogenic scanning optical microscope", 日韓先端技術交流セミナー, 韓国水原市 三星総合技術院, August 2003
+M. Yoshimoto, S. Murata, J. Saraie, K. Oe, A.Chayahara: "Growth of metastable GaAsBi alloy by molecular beam epitaxy", 45th Electronic Materials Conference, Salt Lake City, USA, June 2003
+M. Yoshimoto, Y. Yamamoto, J. Saraie: "Fabrication of InN/Si heterojunction with rectifying characteristics", 5th International Conference on . Nitride Semiconductors（ICNS-5), Nara, May 2003
+M. Yoshimoto, Y. Yamamoto, H. Wei, H. Harima, J. Saraie: "Wide bandgap of polycrystalline InN caused by a few percent incorporation of oxygen", 5th International Conference on . Nitride Semiconductors（ICNS-5), Nara, May 2003
+E. Kurimoto, H. Harima, H. Wei, M. Yoshimoto, T. Yamaguchi, Y. Saito, Y. Nanishi: "Optical detection of major defects in InN", 5th International Conference on . Nitride Semiconductors（ICNS-5), Nara, May 2003
+M. Yoshimoto, "Sub-m scale photoluminescence images of wide bandgap semiconductors by cryogenic scanning optical microscope", 9th international conference on defect-recognition, imaging and physics in semiconductor, Rimini, Italy, September 2001
+M. Yoshimoto, J. Saraie, S. Nakamura, "Impurity Incorporation in Epitaxially Laterally Overgrown GaN Detected by Cryogenic Photoluminescence Microscope with Sub-micron Spatial Resolution", The 13th International Conference on Crystal Growth in Conjunction with The 11th International Conference on Vapor Growth and Epitaxy (ICCG13/ICVGE11), Kyoto, July 2001
+M. Yoshimoto, J. Saraie, S. Nakamura, "Sub-micron scale photoluminescence images of epitaxially laterally overgrown GaN at a low temperature", 43rd Electronic Materials Conference, Notre Dame, USA, June 2001
+M. Yoshimoto, T. Nakano, T. Yamasita, K. Suzuki, J. Saraie: "MBE growth of InN on Si toward hole-barrier structure in Si devices", Int. Workshop on Nitride Semiconductors, 2000（IWN2000), Nagoya, September 2000
+M. Yoshimoto, J. Saraie, "Deep sub-μm scale photoluminescence image of wide bandgap mterials by cryogenic scanning microscope", 2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Naha, June 2000
![[PukiWiki]](image/pukiwiki.png "[PukiWiki]")
